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Transistors Power Field-Effect Transistors IPB035N08N3GATMA1

Transistors
IPB035N08N3GATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 100A I(D), 80V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-262, D2PAK-3

Overview of IPB035N08N3GATMA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 10 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for IPB035N08N3GATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 13AC9026
Newark Mosfet, N-Ch, 80V, 100A, 175Deg C, 214W, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon IPB035N08N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 50
  • 1 $4.3600
  • 10 $3.6600
  • 25 $3.4500
  • 50 $3.2100
  • 100 $2.9600
  • 250 $2.8000
  • 500 $2.6300
  • 1,000 $2.2500
$2.2500 / $4.3600 Buy Now
DISTI # IPB035N08N3GATMA1CT-ND
DigiKey MOSFET N-CH 80V 100A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1927
In Stock
  • 1 $5.0800
  • 10 $3.3840
  • 100 $2.4187
  • 500 $2.0057
  • 1,000 $1.9603
$1.9603 / $5.0800 Buy Now
DISTI # 13AC9026
Avnet Americas Trans MOSFET N-CH 80V 100A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 13AC9026) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Ammo Pack 50 Partner Stock
  • 1 $4.3600
  • 10 $3.6600
  • 25 $3.4500
  • 50 $3.2100
  • 100 $2.9600
$2.9600 / $4.3600 Buy Now
DISTI # IPB035N08N3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB035N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPB035N08N3GATMA
Mouser Electronics MOSFETs N-Ch 80V 100A D2PAK-2 OptiMOS 3 RoHS: Compliant 562
  • 1 $4.5600
  • 10 $3.4200
  • 25 $3.3500
  • 100 $2.4500
  • 500 $2.0300
  • 1,000 $1.9600
$1.9600 / $4.5600 Buy Now
Future Electronics OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 1,000 $1.9800
  • 2,000 $1.9300
$1.9300 / $1.9800 Buy Now
Future Electronics OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 1,000 $1.9800
  • 2,000 $1.9300
$1.9300 / $1.9800 Buy Now
DISTI # 79926950
Verical Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2410 Americas - 2000
  • 1,000 $2.1039
$2.1039 Buy Now
DISTI # SP000457588
EBV Elektronik Trans MOSFET N-CH 80V 100A 3-Pin TO-263 T/R (Alt: SP000457588) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 80V 100A 214W 3.5m100A10V 3.5V155uA 1 N-Channel TO-263-3 MOSFETs ROHS 10
  • 1 $2.9671
  • 10 $2.6452
  • 30 $2.4482
  • 100 $2.2840
$2.2840 / $2.9671 Buy Now

CAD Models for IPB035N08N3GATMA1 by Infineon Technologies AG
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Part Data Attributes for IPB035N08N3GATMA1 by Infineon Technologies AG
Parametric Data

IPB035N08N3GATMA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
19 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
510 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
Drain Current-Max (ID)
100 A
Drain-source On Resistance-Max
0.0035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
214 W
Pulsed Drain Current-Max (IDM)
400 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPB035N08N3GATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 100A I(D), 80V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-262, D2PAK-3
    VS

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