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Transistors / Power Field-Effect Transistors / IPB039N10N3GATMA1
Datasheets
IPB039N10N3GATMA1 by:

Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN

Part Details for IPB039N10N3GATMA1 by Infineon Technologies AG

Overview of IPB039N10N3GATMA1 by Infineon Technologies AG

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Price & Stock for IPB039N10N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47W3465
Newark Mosfet, N Channel, 100V, 160A, To263-7, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:160A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPB039N10N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 4548
  • 1 $3.0500
  • 10 $2.5600
  • 100 $2.0700
  • 500 $1.8400
$1.8400 / $3.0500 Buy Now
DISTI # IPB039N10N3GATMA1CT-ND
DigiKey MOSFET N-CH 100V 160A TO263-7 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 29689
In Stock
  • 1 $2.9300
  • 10 $2.4560
  • 100 $1.9871
  • 500 $1.7663
  • 1,000 $1.5124
  • 2,000 $1.4241
  • 5,000 $1.3662
$1.3662 / $2.9300 Buy Now
DISTI # IPB039N10N3GATMA1
Avnet Americas Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.5028
  • 2,000 $1.4573
  • 4,000 $1.4117
  • 6,000 $1.3662
  • 8,000 $1.3207
  • 10,000 $1.2751
  • 100,000 $1.2296
$1.2296 / $1.5028 Buy Now
DISTI # 726-IPB039N10N3GATMA
Mouser Electronics MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant 0
  • 1 $2.9200
  • 10 $2.4500
  • 25 $2.4300
  • 100 $1.9800
  • 250 $1.9500
  • 500 $1.6700
  • 1,000 $1.4500
  • 2,000 $1.3700
  • 5,000 $1.3300
$1.3300 / $2.9200 Order Now
DISTI # V36:1790_06377391
Arrow Electronics Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2342 Americas - 27000
  • 1,000 $1.2763
  • 2,000 $1.2145
  • 5,000 $1.2023
$1.2023 / $1.2763 Buy Now
DISTI # V72:2272_06377391
Arrow Electronics Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2331 Container: Cut Strips Americas - 848
  • 1 $2.8644
  • 10 $2.4146
  • 25 $2.3953
  • 100 $1.9030
  • 250 $1.8558
  • 500 $1.2891
$1.2891 / $2.8644 Buy Now
Future Electronics Single N-Channel 100 V 3.9 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 15000
Reel
  • 1,000 $1.2400
  • 2,000 $1.2200
  • 3,000 $1.2100
  • 4,000 $1.2000
$1.2000 / $1.2400 Buy Now
Future Electronics Single N-Channel 100 V 3.9 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.2400
  • 2,000 $1.2200
  • 3,000 $1.2100
  • 4,000 $1.2000
$1.2000 / $1.2400 Buy Now
Bristol Electronics   100
RFQ
Rochester Electronics IPB039N10 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 4
  • 1 $1.5900
  • 25 $1.5600
  • 100 $1.5000
  • 500 $1.4300
  • 1,000 $1.3500
$1.3500 / $1.5900 Buy Now
DISTI # IPB039N10N3GATMA1
Avnet Americas Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.5028
  • 2,000 $1.4573
  • 4,000 $1.4117
  • 6,000 $1.3662
  • 8,000 $1.3207
  • 10,000 $1.2751
  • 100,000 $1.2296
$1.2296 / $1.5028 Buy Now
DISTI # IPB039N10N3GATMA1
TME Transistor: N-MOSFET, unipolar, 100V, 160A, 214W, PG-TO263-7 Min Qty: 1 0
  • 1 $2.8700
  • 5 $2.5700
  • 25 $2.2900
  • 100 $1.9700
  • 250 $1.8300
$1.8300 / $2.8700 RFQ
Ameya Holding Limited   Min Qty: 2 974
  • 2 $3.6056
  • 50 $3.2539
  • 100 $2.6628
  • 250 $2.6079
  • 500 $2.2688
$2.2688 / $3.6056 Buy Now
DISTI # 2212838
element14 Asia-Pacific MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant Min Qty: 1 Container: Each 4548
  • 1 $3.0992
  • 10 $2.4557
  • 100 $1.9897
  • 500 $1.8862
  • 1,000 $1.5903
$1.5903 / $3.0992 Buy Now
DISTI # 2212838
Farnell MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 4548
  • 1 $3.3237
  • 10 $2.3417
  • 100 $1.9011
  • 500 $1.7248
  • 1,000 $1.4730
$1.4730 / $3.3237 Buy Now
LCSC 100V 160A 3.9m100A10V 214W 3.5V160uA 1PCSNChannel TO-263-7 MOSFETs ROHS 35
  • 1 $1.4978
  • 10 $1.4635
  • 30 $1.4411
  • 100 $1.4187
$1.4187 / $1.4978 Buy Now

Part Details for IPB039N10N3GATMA1

IPB039N10N3GATMA1 CAD Models

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IPB039N10N3GATMA1 Part Data Attributes:

Parametric Data
IPB039N10N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB039N10N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 7 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 340 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.0039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AA
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 640 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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