Part Details for IPB042N03LGATMA1 by Infineon Technologies AG
Overview of IPB042N03LGATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Automotive
Price & Stock for IPB042N03LGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1775533
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Farnell | MOSFET, N CH, 70A, 30V, PG-TO263-3 RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each | 0 |
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$0.4289 | Buy Now |
Part Details for IPB042N03LGATMA1
IPB042N03LGATMA1 CAD Models
IPB042N03LGATMA1 Part Data Attributes
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IPB042N03LGATMA1
Infineon Technologies AG
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Datasheet
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IPB042N03LGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB042N03LGATMA1
This table gives cross-reference parts and alternative options found for IPB042N03LGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB042N03LGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB6676L86Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IPB042N03LGATMA1 vs FDB6676L86Z |
| NTB75N03-06G | TRANSISTOR 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3, FET General Purpose Power | onsemi | IPB042N03LGATMA1 vs NTB75N03-06G |
| BUK9M6R6-30EX | BUK9M6R6-30E - N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | IPB042N03LGATMA1 vs BUK9M6R6-30EX |
| BUK7606-30118 | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IPB042N03LGATMA1 vs BUK7606-30118 |
| EMB06N03H | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8 | Excelliance MOS Corporation | IPB042N03LGATMA1 vs EMB06N03H |
| BUK7606-30,118 | 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IPB042N03LGATMA1 vs BUK7606-30,118 |
| NTB75N03-06 | TRANSISTOR 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3, FET General Purpose Power | onsemi | IPB042N03LGATMA1 vs NTB75N03-06 |
| IPB042N03LG | Power Field-Effect Transistor, 70A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB042N03LGATMA1 vs IPB042N03LG |
| ISL9N306AS3STL86Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | IPB042N03LGATMA1 vs ISL9N306AS3STL86Z |
| BUK9606-30118 | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IPB042N03LGATMA1 vs BUK9606-30118 |