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Part Details for IPB042N10N3GATMA1 by Infineon Technologies AG
Overview of IPB042N10N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPB042N10N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47Y8047
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Newark | Mosfet, N-Ch, 100V, 100A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPB042N10N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 177 |
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$1.4700 / $2.8100 | Buy Now |
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DISTI #
86AK5156
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Newark | Mosfet, N-Ch, 100V, 100A, To-263 Rohs Compliant: Yes |Infineon IPB042N10N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3300 | Buy Now |
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DISTI #
47Y8047
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Avnet Americas | Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 47Y8047) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 177 Partner Stock |
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$1.8000 / $2.1000 | Buy Now |
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DISTI #
IPB042N10N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
IPB042N10N3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 214W, PG-TO263-3 Min Qty: 1 | 0 |
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$1.2800 / $2.8100 | RFQ |
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Chip-Germany GmbH | RoHS: Not Compliant | 150 |
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RFQ | |
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DISTI #
C1S322000438114
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Chip1Stop | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 RoHS: Compliant Container: Cut Tape | 1372 |
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$1.0600 / $1.0700 | Buy Now |
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DISTI #
SP000446880
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EBV Elektronik | Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R (Alt: SP000446880) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | EBV - 153000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 120000 |
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$1.4700 / $1.5900 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 100A D2PAK | 193700 |
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$0.7350 / $1.1030 | Buy Now |
Part Details for IPB042N10N3GATMA1
IPB042N10N3GATMA1 CAD Models
IPB042N10N3GATMA1 Part Data Attributes
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IPB042N10N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB042N10N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 19 Weeks, 1 Day | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |