Findchips: ipb048n15n5lfatma1 details by Infineon Technologies AG

Results Overview of IPB048N15N5LFATMA1 by Infineon Technologies AG

Distributor Offerings: (4 listings)
Number of FFF Equivalents: (0 replacements)
CAD Models: (Available)
Number of Functional Equivalents: (1 option)
Part Data Attributes: (Available)
Reference Designs: (Not Available)

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Automotive

IPB048N15N5LFATMA1 Information

IPB048N15N5LFATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part #	Distributor	Description	Stock	Price	Buy
IPB048N15N5LFATMA1 DISTI # 93AC7100	Newark	Mosfet, N-Ch, 150V, 120A, 150Deg C, 313W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.1V Rohs Compliant: Yes \|Infineon IPB048N15N5LFATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape	384	1 $9.4100 10 $6.9600 25 $6.4900 50 $6.0200 100 $5.5400 250 $5.5400 500 $5.5300 1,000 $5.5300	$5.5300 / $9.4100	Buy Now
IPB048N15N5LFATMA1 DISTI # IPB048N15N5LFATMA1	Avnet Americas	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB048N15N5LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel	0	1,000 $4.3794 2,000 $4.3435 4,000 $4.3076 6,000 $4.2717 8,000 $4.2359	$4.2359 / $4.3794	Buy Now
IPB048N15N5LFATMA1 DISTI # C1S322000704275	Chip1Stop	MOSFET RoHS: Compliant Container: Cut Tape	996	1 $7.5700 10 $5.5600 50 $5.4300 200 $5.4100 500 $4.8400	$4.8400 / $7.5700	Buy Now
IPB048N15N5LFATMA1 DISTI # SP001503860	EBV Elektronik	DIFFERENTIATED MOSFETS (Alt: SP001503860) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 27 Weeks, 0 Days	EBV - 0			Buy Now

Part Details for IPB048N15N5LFATMA1

IPB048N15N5LFATMA1 CAD Models

Part Symbol
Footprint
3D Model

Available Download Formats

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

IPB048N15N5LFATMA1 Part Data Attributes

Parametric Data

Show differences only	IPB048N15N5LFATMA1 Infineon Technologies AG Buy Now Datasheet	Buy Now	Compare Parts: IPB048N15N5LFATMA1 Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Rohs Code	Yes
Part Life Cycle Code	Active
Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Package Description	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant
ECCN Code	EAR99
Factory Lead Time	26 Weeks
Samacsys Manufacturer	Infineon
Avalanche Energy Rating (Eas)	30 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	120 A
Drain-source On Resistance-Max	0.0048 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	23 pF
JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	313 W
Pulsed Drain Current-Max (IDM)	480 A
Surface Mount	YES
Terminal Finish	Tin (Sn)
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON

Alternate Parts for IPB048N15N5LFATMA1

This table gives cross-reference parts and alternative options found for IPB048N15N5LFATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB048N15N5LFATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description	Compare
NTBGS6D5N15MC	onsemi	$4.1469	Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Channel, D2PAK7, D2PAK-7 / TO-263-7, 800-REEL	IPB048N15N5LFATMA1 vs NTBGS6D5N15MC

IPB048N15N5LFATMA1 Frequently Asked Questions (FAQ)

The maximum operating temperature range for IPB048N15N5LFATMA1 is -55°C to 175°C.
Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
The recommended gate resistor value for IPB048N15N5LFATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
Yes, IPB048N15N5LFATMA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.

Part Details for IPB048N15N5LFATMA1 by Infineon Technologies AG

Results Overview of IPB048N15N5LFATMA1 by Infineon Technologies AG

IPB048N15N5LFATMA1 Information

Price & Stock for IPB048N15N5LFATMA1