Datasheets
IPB100N04S204ATMA4 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB100N04S204ATMA4 by Infineon Technologies AG

Overview of IPB100N04S204ATMA4 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB100N04S204ATMA4

Part # Distributor Description Stock Price Buy
DISTI # IPB100N04S204ATMA4CT-ND
DigiKey MOSFET N-CH 40V 100A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 990
In Stock
  • 1 $4.0700
  • 10 $3.4180
  • 100 $2.7652
  • 500 $2.4579
  • 1,000 $2.1046
  • 2,000 $1.9817
  • 5,000 $1.9013
$1.9013 / $4.0700 Buy Now
DISTI # IPB100N04S204ATMA4
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S204ATMA4) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3575
$2.3575 Buy Now
DISTI # 726-IPB100N04S204ATM
Mouser Electronics MOSFET MOSFET_(20V 40V) RoHS: Compliant 1000
  • 1 $4.0700
  • 10 $3.4200
  • 25 $3.3900
  • 100 $2.7600
  • 250 $2.7500
  • 500 $2.4600
  • 1,000 $2.1000
  • 2,000 $1.9800
$1.9800 / $4.0700 Buy Now
Rochester Electronics IPB100N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 4499
  • 1 $2.2200
  • 25 $2.1700
  • 100 $2.0900
  • 500 $2.0000
  • 1,000 $1.8900
$1.8900 / $2.2200 Buy Now
DISTI # IPB100N04S204ATMA4
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S204ATMA4) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3575
$2.3575 Buy Now
Ameya Holding Limited MOSFET N-CH 40V 100A TO263-3 500
RFQ
Ameya Holding Limited   Min Qty: 1000 5985
  • 1,000 $2.7710
  • 5,000 $2.6880
$2.6880 / $2.7710 Buy Now
DISTI # IPB100N04S204ATMA4
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S204ATMA4) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3575
$2.3575 Buy Now
DISTI # SP001058122
EBV Elektronik Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R (Alt: SP001058122) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IPB100N04S204ATMA4

IPB100N04S204ATMA4 CAD Models

IPB100N04S204ATMA4 Part Data Attributes

IPB100N04S204ATMA4 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB100N04S204ATMA4 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB100N04S204ATMA4

This table gives cross-reference parts and alternative options found for IPB100N04S204ATMA4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S204ATMA4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB100N04S204ATMA1 Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S204ATMA4 vs IPB100N04S204ATMA1
IPB100N04S2-04 Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S204ATMA4 vs IPB100N04S2-04
Part Number Description Manufacturer Compare
IPB100N04S2-04 Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S204ATMA4 vs IPB100N04S2-04
BUK9E3R2-40E,127 N-channel TrenchMOS logic level FET TO-262 3-Pin NXP Semiconductors IPB100N04S204ATMA4 vs BUK9E3R2-40E,127
BUK953R2-40E,127 N-channel TrenchMOS logic level FET TO-220 3-Pin NXP Semiconductors IPB100N04S204ATMA4 vs BUK953R2-40E,127
TK100F04K3 TRANSISTOR 100 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10W1A, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IPB100N04S204ATMA4 vs TK100F04K3
DMTH4004SK3Q-13 Power Field-Effect Transistor, 100A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Diodes Incorporated IPB100N04S204ATMA4 vs DMTH4004SK3Q-13
IPD90N04S403ATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPB100N04S204ATMA4 vs IPD90N04S403ATMA1
NP110N04PDG Power Field-Effect Transistor, 110A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZP, 3 PIN NEC Electronics America Inc IPB100N04S204ATMA4 vs NP110N04PDG
IPB100N04S204ATMA1 Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S204ATMA4 vs IPB100N04S204ATMA1
TK3R1E04PL Power Field-Effect Transistor Toshiba America Electronic Components IPB100N04S204ATMA4 vs TK3R1E04PL
IPC100N04S5L2R6ATMA1 Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN Infineon Technologies AG IPB100N04S204ATMA4 vs IPC100N04S5L2R6ATMA1

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