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Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB100N04S204ATMA4CT-ND
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DigiKey | MOSFET N-CH 40V 100A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
990 In Stock |
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$1.9013 / $4.0700 | Buy Now |
DISTI #
IPB100N04S204ATMA4
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S204ATMA4) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.3575 | Buy Now |
DISTI #
726-IPB100N04S204ATM
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Mouser Electronics | MOSFET MOSFET_(20V 40V) RoHS: Compliant | 1000 |
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$1.9800 / $4.0700 | Buy Now |
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Rochester Electronics | IPB100N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 4499 |
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$1.8900 / $2.2200 | Buy Now |
DISTI #
IPB100N04S204ATMA4
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S204ATMA4) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.3575 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 40V 100A TO263-3 | 500 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 1000 | 5985 |
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$2.6880 / $2.7710 | Buy Now |
DISTI #
IPB100N04S204ATMA4
|
Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S204ATMA4) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$2.3575 | Buy Now |
DISTI #
SP001058122
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EBV Elektronik | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R (Alt: SP001058122) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
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IPB100N04S204ATMA4
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB100N04S204ATMA4
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB100N04S204ATMA4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S204ATMA4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB100N04S204ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S204ATMA4 vs IPB100N04S204ATMA1 |
IPB100N04S2-04 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S204ATMA4 vs IPB100N04S2-04 |