Part Details for IPB100N04S3-03 by Infineon Technologies AG
Overview of IPB100N04S3-03 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB100N04S3-03
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB100N04S303
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Mouser Electronics | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T RoHS: Compliant | 0 |
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Order Now | |
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Bristol Electronics | 657 |
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RFQ | ||
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Quest Components | 525 |
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$1.4256 / $3.4560 | Buy Now | |
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DISTI #
TMOSP9084
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Rutronik | MOSFET 40V 3.2mOHM AECQ TO263 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Stock DE - 116000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.8000 / $2.3300 | Buy Now |
Part Details for IPB100N04S3-03
IPB100N04S3-03 CAD Models
IPB100N04S3-03 Part Data Attributes
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IPB100N04S3-03
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB100N04S3-03
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 898 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 214 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB100N04S3-03
This table gives cross-reference parts and alternative options found for IPB100N04S3-03. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S3-03, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB100N04S2-04 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S3-03 vs IPB100N04S2-04 |
| BUK9E3R2-40E,127 | N-channel TrenchMOS logic level FET TO-262 3-Pin | NXP Semiconductors | IPB100N04S3-03 vs BUK9E3R2-40E,127 |
| BUK953R2-40E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | IPB100N04S3-03 vs BUK953R2-40E,127 |
| TK100F04K3 | TRANSISTOR 100 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10W1A, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IPB100N04S3-03 vs TK100F04K3 |
| DMTH4004SK3Q-13 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Diodes Incorporated | IPB100N04S3-03 vs DMTH4004SK3Q-13 |
| IPD90N04S403ATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPB100N04S3-03 vs IPD90N04S403ATMA1 |
| NP110N04PDG | Power Field-Effect Transistor, 110A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZP, 3 PIN | NEC Electronics America Inc | IPB100N04S3-03 vs NP110N04PDG |
| IPB100N04S204ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S3-03 vs IPB100N04S204ATMA1 |
| TK3R1E04PL | Power Field-Effect Transistor | Toshiba America Electronic Components | IPB100N04S3-03 vs TK3R1E04PL |
| IPC100N04S5L2R6ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN | Infineon Technologies AG | IPB100N04S3-03 vs IPC100N04S5L2R6ATMA1 |