Part Details for IPB100N04S303ATMA1 by Infineon Technologies AG
Overview of IPB100N04S303ATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IPB100N04S303ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPB100N04S303ATMA1-ND
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DigiKey | MOSFET N-CH 40V 100A TO263-3 Min Qty: 147 Lead time: 12 Weeks Container: Bulk MARKETPLACE PRODUCT |
790 In Stock |
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$2.0500 | Buy Now |
DISTI #
IPB100N04S303ATMA1TR-ND
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DigiKey | MOSFET N-CH 40V 100A TO263-3 Min Qty: 147 Lead time: 12 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$1.7745 / $1.9643 | Buy Now |
DISTI #
IPB100N04S303ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N04S303ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.9165 / $2.3423 | Buy Now |
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Rochester Electronics | IPB100N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 790 |
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$1.7600 / $2.0700 | Buy Now |
DISTI #
IPB100N04S303ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N04S303ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.9165 / $2.3423 | Buy Now |
DISTI #
IPB100N04S303
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TME | Transistor: N-MOSFET, OptiMOS™ T, unipolar, 40V, 100A, 214W Min Qty: 1 | 0 |
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$1.3100 / $1.8300 | RFQ |
DISTI #
IPB100N04S303ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N04S303ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.9165 / $2.3423 | Buy Now |
DISTI #
SP000260847
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EBV Elektronik | Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 (Alt: SP000260847) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
Part Details for IPB100N04S303ATMA1
IPB100N04S303ATMA1 CAD Models
IPB100N04S303ATMA1 Part Data Attributes
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IPB100N04S303ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB100N04S303ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 898 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB100N04S303ATMA1
This table gives cross-reference parts and alternative options found for IPB100N04S303ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S303ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB022N04LGATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S303ATMA1 vs IPB022N04LGATMA1 |
IPB022N04LG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S303ATMA1 vs IPB022N04LG |