Datasheets
IPB100N06S2L-05 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB100N06S2L-05 by Infineon Technologies AG

Overview of IPB100N06S2L-05 by Infineon Technologies AG

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Part Details for IPB100N06S2L-05

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IPB100N06S2L-05 Part Data Attributes

IPB100N06S2L-05 Infineon Technologies AG
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IPB100N06S2L-05 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB100N06S2L-05

This table gives cross-reference parts and alternative options found for IPB100N06S2L-05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N06S2L-05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB100N06S2L05ATMA1 Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N06S2L-05 vs IPB100N06S2L05ATMA1
Part Number Description Manufacturer Compare
SPB100N06S2L-05 Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N06S2L-05 vs SPB100N06S2L-05
IPB100N06S3L04ATMA1 Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N06S2L-05 vs IPB100N06S3L04ATMA1
IPB100N06S2L05ATMA1 Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N06S2L-05 vs IPB100N06S2L05ATMA1
PSMN5R2-60YLX PSMN5R2-60YL - N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin Nexperia IPB100N06S2L-05 vs PSMN5R2-60YLX
DMTH6005LK3Q-13 Power Field-Effect Transistor, 90A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Diodes Incorporated IPB100N06S2L-05 vs DMTH6005LK3Q-13
STL20N6F7 N-channel 60 V, 0.0046 Ohm typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package STMicroelectronics IPB100N06S2L-05 vs STL20N6F7

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