Part Details for IPB100N06S2L05ATMA1 by Infineon Technologies AG
Overview of IPB100N06S2L05ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPB100N06S2L05ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB100N06S2L05ATMA1TR-ND
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DigiKey | MOSFET N-CH 55V 100A TO263-3 Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IPB100N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 157 |
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$0.8803 / $1.0400 | Buy Now |
Part Details for IPB100N06S2L05ATMA1
IPB100N06S2L05ATMA1 CAD Models
IPB100N06S2L05ATMA1 Part Data Attributes
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IPB100N06S2L05ATMA1
Infineon Technologies AG
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Datasheet
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IPB100N06S2L05ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 810 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB100N06S2L05ATMA1
This table gives cross-reference parts and alternative options found for IPB100N06S2L05ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N06S2L05ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB100N06S2L-05 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N06S2L05ATMA1 vs IPB100N06S2L-05 |