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Part Details for IPB100N12S305ATMA1 by Infineon Technologies AG
Overview of IPB100N12S305ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB100N12S305ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IPB100N12S305ATMA1CT-ND
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DigiKey | MOSFET N-CH 120V 100A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3839 In Stock |
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$2.2420 / $3.3700 | Buy Now |
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DISTI #
726-IPB100N12S305AT
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Mouser Electronics | MOSFET N-CHANNEL 100+ RoHS: Compliant | 1002 |
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$2.2400 / $3.3700 | Buy Now |
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Rochester Electronics | IPB100N12S3-05 - 120V, N-Ch, , Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 735 |
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$2.2200 / $2.6200 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 990 |
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$3.5234 / $5.6206 | Buy Now |
Part Details for IPB100N12S305ATMA1
IPB100N12S305ATMA1 CAD Models
IPB100N12S305ATMA1 Part Data Attributes
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IPB100N12S305ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB100N12S305ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1445 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 330 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB100N12S305ATMA1
This table gives cross-reference parts and alternative options found for IPB100N12S305ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N12S305ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB100N12S3-05 | Power Field-Effect Transistor | Infineon Technologies AG | IPB100N12S305ATMA1 vs IPB100N12S3-05 |