-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IPB107N20N3GATMA1 by Infineon Technologies AG
Overview of IPB107N20N3GATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB107N20N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IPB107N20N3GATMA1CT-ND
|
DigiKey | MOSFET N-CH 200V 88A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7879 In Stock |
|
$4.1796 / $7.8600 | Buy Now |
|
DISTI #
IPB107N20N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20N3GATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$5.0705 | Buy Now |
|
DISTI #
726-IPB107N20N3GATMA
|
Mouser Electronics | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 3403 |
|
$4.3900 / $7.3100 | Buy Now |
|
|
Future Electronics | Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
|
$3.1400 | Buy Now |
|
|
Future Electronics | Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
|
$4.1300 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 24 |
|
$4.5000 / $9.0000 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 800 |
|
$6.0600 / $12.1200 | Buy Now |
|
DISTI #
IPB107N20N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20N3GATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$5.0705 | Buy Now |
|
DISTI #
IPB107N20N3GATMA1
|
TME | Transistor: N-MOSFET, unipolar, 200V, 88A, 300W, PG-TO263-3 Min Qty: 1 | 0 |
|
$6.7500 / $11.1700 | RFQ |
|
|
Ameya Holding Limited | Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK | 1701 |
|
RFQ |
Part Details for IPB107N20N3GATMA1
IPB107N20N3GATMA1 CAD Models
IPB107N20N3GATMA1 Part Data Attributes
|
|
IPB107N20N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB107N20N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 88 A | |
| Drain-source On Resistance-Max | 0.0107 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 352 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB107N20N3GATMA1
This table gives cross-reference parts and alternative options found for IPB107N20N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB107N20N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB107N20N3G | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB107N20N3GATMA1 vs IPB107N20N3G |
| IPB107N20NA | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB107N20N3GATMA1 vs IPB107N20NA |