Part Details for IPB108N15N3GATMA1 by Infineon Technologies AG
Overview of IPB108N15N3GATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB108N15N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB108N15N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 83A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3438 In Stock |
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$2.3327 / $3.5100 | Buy Now |
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DISTI #
85X6017
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Avnet Americas | Power MOSFET, N Channel, 150 V, 83 A, 0.0091 ohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 85X6017) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 329 Partner Stock |
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$3.5300 / $5.1900 | Buy Now |
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DISTI #
IPB108N15N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB108N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$2.0994 / $2.5659 | Buy Now |
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Future Electronics | Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 35000Reel |
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$1.3700 | Buy Now |
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Future Electronics | Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$3.4700 | Buy Now |
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Bristol Electronics | 37700 |
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RFQ | ||
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Quest Components | 30160 |
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$2.3520 / $4.7040 | Buy Now | |
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DISTI #
85X6017
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Avnet Americas | Power MOSFET, N Channel, 150 V, 83 A, 0.0091 ohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 85X6017) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 329 Partner Stock |
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$3.5300 / $5.1900 | Buy Now |
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DISTI #
IPB108N15N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB108N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$2.0994 / $2.5659 | Buy Now |
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DISTI #
IPB108N15N3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 150V, 83A, 214W, PG-TO263-3 Min Qty: 1 | 0 |
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$2.4800 / $4.1000 | RFQ |
Part Details for IPB108N15N3GATMA1
IPB108N15N3GATMA1 CAD Models
IPB108N15N3GATMA1 Part Data Attributes
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IPB108N15N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB108N15N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 83 A | |
| Drain-source On Resistance-Max | 0.0108 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 332 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB108N15N3GATMA1
This table gives cross-reference parts and alternative options found for IPB108N15N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB108N15N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC110N15NS5 | Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Infineon Technologies AG | IPB108N15N3GATMA1 vs BSC110N15NS5 |
| BSC110N15NS5ATMA1 | Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Infineon Technologies AG | IPB108N15N3GATMA1 vs BSC110N15NS5ATMA1 |