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Part Details for IPB110N20N3LFATMA1 by Infineon Technologies AG
Overview of IPB110N20N3LFATMA1 by Infineon Technologies AG
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- Number of Functional Equivalents:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB110N20N3LFATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IPB110N20N3LFATMA1CT-ND
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DigiKey | MOSFET N-CH 200V 88A TO263-3 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3393 In Stock |
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$4.7327 / $8.9000 | Buy Now |
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DISTI #
IPB110N20N3LFATMA1
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Avnet Americas | Transistor MOSFET N-CH 200V 88A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB110N20N3LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$5.7415 | Buy Now |
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DISTI #
726-IPB110N20N3LFATM
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 2772 |
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$5.0500 / $8.9000 | Buy Now |
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Future Electronics | N-Channel 200 V 88 A 250 W Surface Mount OptiMOS 3 Linear Mosfet - D²PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
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$4.9600 | Buy Now |
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Future Electronics | N-Channel 200 V 88 A 250 W Surface Mount OptiMOS 3 Linear Mosfet - D²PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$4.9600 | Buy Now |
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DISTI #
IPB110N20N3LFATMA1
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Avnet Americas | Transistor MOSFET N-CH 200V 88A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB110N20N3LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$5.7415 | Buy Now |
|
DISTI #
IPB110N20N3LFATMA1
|
Avnet Americas | Transistor MOSFET N-CH 200V 88A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB110N20N3LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$5.7415 | Buy Now |
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DISTI #
SP001503864
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EBV Elektronik | Transistor MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: SP001503864) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 5 Days | EBV - 0 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 2000 |
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$6.6000 / $7.0700 | Buy Now |
Part Details for IPB110N20N3LFATMA1
IPB110N20N3LFATMA1 CAD Models
IPB110N20N3LFATMA1 Part Data Attributes
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IPB110N20N3LFATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB110N20N3LFATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 352 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |