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Power Field-Effect Transistor, 100A I(D), 60V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB110P06LMATMA1CT-ND
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DigiKey | MOSFET P-CH 60V 100A TO263-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1458 In Stock |
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$2.4289 / $4.9900 | Buy Now |
DISTI #
IPB110P06LMATMA1
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Avnet Americas | Transistor MOSFET P-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB110P06LMATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$2.0972 / $2.5633 | Buy Now |
DISTI #
726-IPB110P06LMATMA1
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 5057 |
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$2.4100 / $4.9800 | Buy Now |
DISTI #
IPB110P06LMATMA1
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Avnet Americas | Transistor MOSFET P-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB110P06LMATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.0972 / $2.5633 | Buy Now |
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Ameya Holding Limited | 2528 |
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RFQ | ||
DISTI #
IPB110P06LMATMA1
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Avnet Americas | Transistor MOSFET P-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB110P06LMATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$2.0972 / $2.5633 | Buy Now |
DISTI #
SP004987252
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EBV Elektronik | Transistor MOSFET P-CH 60V 100A 3-Pin TO-263 T/R (Alt: SP004987252) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET P-CH 60V 100A TO263-3 | 18200 |
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$3.7690 / $5.6530 | Buy Now |
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IPB110P06LMATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB110P06LMATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 60V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1616 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 260 pF | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |