Part Details for IPB120N04S4-02 by Infineon Technologies AG
Overview of IPB120N04S4-02 by Infineon Technologies AG
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Price & Stock for IPB120N04S4-02
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB120N04S4-02
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Mouser Electronics | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 RoHS: Compliant | 950 |
|
$1.4100 / $3.0300 | Buy Now |
|
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Win Source Electronics | Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor | 84500 |
|
$3.0150 / $4.5220 | Buy Now |
Part Details for IPB120N04S4-02
IPB120N04S4-02 CAD Models
IPB120N04S4-02 Part Data Attributes
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IPB120N04S4-02
Infineon Technologies AG
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Datasheet
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IPB120N04S4-02
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 480 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 158 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |