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Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB120N04S402ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2734 In Stock |
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$1.4175 / $3.0400 | Buy Now |
DISTI #
IPB120N04S402ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120N04S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.7577 | Buy Now |
DISTI #
726-IPB120N04S402ATM
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Mouser Electronics | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 RoHS: Compliant | 2000 |
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$1.4100 / $2.1500 | Buy Now |
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Future Electronics | Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 35Cut Tape/Mini-Reel |
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$2.0200 / $2.6400 | Buy Now |
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Future Electronics | Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.3900 / $1.4300 | Buy Now |
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Bristol Electronics | 178 |
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RFQ | ||
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Rochester Electronics | IPB120N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 7960 |
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$1.4100 / $1.6500 | Buy Now |
DISTI #
IPB120N04S402ATMA1
|
Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120N04S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.7577 | Buy Now |
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Ameya Holding Limited | Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3 | 1000 |
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RFQ | |
DISTI #
IPB120N04S402ATMA1
|
Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120N04S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.7577 | Buy Now |
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IPB120N04S402ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB120N04S402ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 480 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |