Part Details for IPB120N06S403ATMA2 by Infineon Technologies AG
Overview of IPB120N06S403ATMA2 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPB120N06S403ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB120N06S403ATMA2CT-ND
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DigiKey | MOSFET N-CH 60V 120A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$1.2692 / $2.7200 | Buy Now |
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DISTI #
IPB120N06S403ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S403ATMA2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.5739 | Buy Now |
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DISTI #
726-IPB120N06S403ATM
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Mouser Electronics | MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant | 562 |
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$1.2600 / $2.7800 | Buy Now |
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Rochester Electronics | IPB120N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 660 |
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$1.2600 / $1.4800 | Buy Now |
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DISTI #
IPB120N06S403ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S403ATMA2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.5739 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 60V 120A TO263-3 | 281 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 2 | 1000 |
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$2.2012 / $3.5216 | Buy Now |
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DISTI #
IPB120N06S403ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S403ATMA2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.5739 | Buy Now |
Part Details for IPB120N06S403ATMA2
IPB120N06S403ATMA2 CAD Models
IPB120N06S403ATMA2 Part Data Attributes
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IPB120N06S403ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB120N06S403ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263, 3/2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 392 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB120N06S403ATMA2
This table gives cross-reference parts and alternative options found for IPB120N06S403ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N06S403ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB120N06S402ATMA1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPB120N06S402ATMA1 |
| 934066513127 | 120A, 60V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | NXP Semiconductors | IPB120N06S403ATMA2 vs 934066513127 |
| IPI120N06S4-02 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPI120N06S4-02 |
| IPI120N06S4H1AKSA1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPI120N06S4H1AKSA1 |
| IPI120N06S4H1AKSA2 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPI120N06S4H1AKSA2 |
| IPB120N06S403ATMA1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPB120N06S403ATMA1 |
| IPP120N06S402AKSA2 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPP120N06S402AKSA2 |
| IPI120N06S4H1XK | Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB120N06S403ATMA2 vs IPI120N06S4H1XK |