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Transistors / Power Field-Effect Transistors / IPB120N06S4H1ATMA2
Datasheets
IPB120N06S4H1ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN

Part Details for IPB120N06S4H1ATMA2 by Infineon Technologies AG

Overview of IPB120N06S4H1ATMA2 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPB120N06S4H1ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 448-IPB120N06S4H1ATMA2CT-ND
DigiKey MOSFET N-CH 60V 120A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $3.9300
  • 10 $3.3030
  • 100 $2.6725
  • 500 $2.3755
  • 1,000 $2.0340
  • 2,000 $1.9153
  • 5,000 $1.8375
$1.8375 / $3.9300 Buy Now
DISTI # IPB120N06S4H1ATMA2
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.2785
$2.2785 Buy Now
DISTI # 726-IPB120N06S4H1ATM
Mouser Electronics MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant 503
  • 1 $3.9400
  • 10 $3.3200
  • 25 $3.0200
  • 100 $2.6900
  • 250 $2.6300
  • 500 $2.3900
  • 1,000 $2.0300
  • 2,000 $1.9100
$1.9100 / $3.9400 Buy Now
Future Electronics MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1000 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $2.6900
  • 10 $2.5300
  • 40 $2.4400
  • 150 $2.3500
  • 500 $2.2400
$2.2400 / $2.6900 Buy Now
DISTI # IPB120N06S4H1ATMA2
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.2785
$2.2785 Buy Now
Ameya Holding Limited   251
RFQ
DISTI # IPB120N06S4H1ATMA2
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.2785
$2.2785 Buy Now

Part Details for IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2 CAD Models

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IPB120N06S4H1ATMA2 Part Data Attributes

Parametric Data
IPB120N06S4H1ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB120N06S4H1ATMA2 Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature GREEN
Avalanche Energy Rating (Eas) 1060 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB120N06S4H1ATMA2

This table gives cross-reference parts and alternative options found for IPB120N06S4H1ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N06S4H1ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB019N06L3G Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB120N06S4H1ATMA2 vs IPB019N06L3G
IPB019N06L3GATMA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB120N06S4H1ATMA2 vs IPB019N06L3GATMA1
PSMN1R7-60BS,118 PSMN1R7-60BS - N-channel 60 V 2 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin Nexperia IPB120N06S4H1ATMA2 vs PSMN1R7-60BS,118

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