Part Details for IPB120N10S4-05 by Infineon Technologies AG
Overview of IPB120N10S4-05 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPB120N10S4-05
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 5600 |
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$3.5130 / $7.0260 | Buy Now |
Part Details for IPB120N10S4-05
IPB120N10S4-05 CAD Models
IPB120N10S4-05 Part Data Attributes
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IPB120N10S4-05
Infineon Technologies AG
Buy Now
Datasheet
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IPB120N10S4-05
Infineon Technologies AG
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB120N10S4-05
This table gives cross-reference parts and alternative options found for IPB120N10S4-05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N10S4-05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN4R8-100PSE | Power Field-Effect Transistor | Nexperia | IPB120N10S4-05 vs PSMN4R8-100PSE |
| IRFB4110GPBF | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB120N10S4-05 vs IRFB4110GPBF |
| PSMN4R8-100BSEJ | PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin | Nexperia | IPB120N10S4-05 vs PSMN4R8-100BSEJ |
| IPP120N10S4-05 | Power Field-Effect Transistor | Infineon Technologies AG | IPB120N10S4-05 vs IPP120N10S4-05 |
| PSMN4R8-100BSE | Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | IPB120N10S4-05 vs PSMN4R8-100BSE |
| PSMN4R8-100PSEQ | PSMN4R8-100PSE - N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package@en-us TO-220 3-Pin | Nexperia | IPB120N10S4-05 vs PSMN4R8-100PSEQ |