Datasheets
IPB120N10S403ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPB120N10S403ATMA1 by Infineon Technologies AG

Overview of IPB120N10S403ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB120N10S403ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-IPB120N10S403ATMA1CT-ND
DigiKey MOSFET N-CH 100V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 870
In Stock
  • 1 $5.1300
  • 10 $4.3090
  • 100 $3.4860
  • 500 $3.0987
  • 1,000 $2.6532
  • 2,000 $2.4983
$2.4983 / $5.1300 Buy Now
DISTI # IPB120N10S403ATMA1
Avnet Americas Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S403ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.9721
$2.9721 Buy Now
DISTI # 726-IPB120N10S403ATM
Mouser Electronics MOSFET N-CHANNEL 100+ RoHS: Compliant 980
  • 1 $5.1200
  • 10 $4.3000
  • 25 $4.0600
  • 100 $3.4800
  • 250 $3.2900
  • 500 $3.0900
  • 1,000 $2.6500
  • 2,000 $2.4900
$2.4900 / $5.1200 Buy Now
DISTI # IPB120N10S403ATMA1
Avnet Americas Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S403ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.9721
$2.9721 Buy Now
DISTI # IPB120N10S403ATMA1
Avnet Americas Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S403ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.9721
$2.9721 Buy Now
DISTI # SP001102598
EBV Elektronik Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001102598) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IPB120N10S403ATMA1

IPB120N10S403ATMA1 CAD Models

IPB120N10S403ATMA1 Part Data Attributes

IPB120N10S403ATMA1 Infineon Technologies AG
Buy Now Datasheet
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IPB120N10S403ATMA1 Infineon Technologies AG Power Field-Effect Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 770 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 480 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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