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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB120N10S403ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
870 In Stock |
|
$2.4983 / $5.1300 | Buy Now |
DISTI #
IPB120N10S403ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S403ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$2.9721 | Buy Now |
DISTI #
726-IPB120N10S403ATM
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Mouser Electronics | MOSFET N-CHANNEL 100+ RoHS: Compliant | 980 |
|
$2.4900 / $5.1200 | Buy Now |
DISTI #
IPB120N10S403ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S403ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$2.9721 | Buy Now |
DISTI #
IPB120N10S403ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S403ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$2.9721 | Buy Now |
DISTI #
SP001102598
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EBV Elektronik | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001102598) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
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IPB120N10S403ATMA1
Infineon Technologies AG
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Datasheet
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IPB120N10S403ATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 770 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 300 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |