Datasheets
IPB120N10S405ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN

Part Details for IPB120N10S405ATMA1 by Infineon Technologies AG

Overview of IPB120N10S405ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB120N10S405ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-IPB120N10S405ATMA1CT-ND
DigiKey MOSFET N-CH 100V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 13496
In Stock
  • 1 $2.6800
  • 10 $2.2480
  • 100 $1.8185
  • 500 $1.7786
  • 1,000 $1.7786
$1.7786 / $2.6800 Buy Now
DISTI # IPB120N10S405ATMA1
Avnet Americas Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S405ATMA1) RoHS: Not Compliant Min Qty: 7000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 7,000 $2.2055
$2.2055 Buy Now
DISTI # 726-IPB120N10S405ATM
Mouser Electronics MOSFET N-CHANNEL 100+ RoHS: Compliant 15924
  • 1 $2.6800
  • 10 $2.2500
  • 100 $1.8200
  • 500 $1.7800
  • 1,000 $1.7700
$1.7700 / $2.6800 Buy Now
Future Electronics IPB120N10S405 Series 100 V 120 A 5 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 18000
Reel
  • 1,000 $1.8900
  • 2,000 $1.8400
$1.8400 / $1.8900 Buy Now
Rochester Electronics IPB120N10 - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 38
  • 1 $2.0800
  • 25 $2.0300
  • 100 $1.9500
  • 500 $1.8700
  • 1,000 $1.7600
$1.7600 / $2.0800 Buy Now
DISTI # IPB120N10S405ATMA1
Avnet Americas Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S405ATMA1) RoHS: Not Compliant Min Qty: 7000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 7,000 $2.2055
$2.2055 Buy Now
DISTI # IPB120N10S405ATMA1
Avnet Americas Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N10S405ATMA1) RoHS: Not Compliant Min Qty: 7000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 7,000 $2.2055
$2.2055 Buy Now
CHIPMALL.COM LIMITED   182
  • 1 $2.3068
$2.3068 Buy Now
DISTI # SP001102592
EBV Elektronik Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001102592) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 1000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 14000
  • 1,000 $2.5900
  • 14,000 $2.4100
$2.4100 / $2.5900 Buy Now

Part Details for IPB120N10S405ATMA1

IPB120N10S405ATMA1 CAD Models

IPB120N10S405ATMA1 Part Data Attributes

IPB120N10S405ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB120N10S405ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 330 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 480 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB120N10S405ATMA1

This table gives cross-reference parts and alternative options found for IPB120N10S405ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N10S405ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB120N10S4-05 Power Field-Effect Transistor Infineon Technologies AG IPB120N10S405ATMA1 vs IPB120N10S4-05
Part Number Description Manufacturer Compare
IPB120N10S4-05 Power Field-Effect Transistor Infineon Technologies AG IPB120N10S405ATMA1 vs IPB120N10S4-05
PSMN4R8-100PSE Power Field-Effect Transistor Nexperia IPB120N10S405ATMA1 vs PSMN4R8-100PSE
IRFB4110GPBF Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IPB120N10S405ATMA1 vs IRFB4110GPBF
PSMN4R8-100BSEJ PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin Nexperia IPB120N10S405ATMA1 vs PSMN4R8-100BSEJ
IPP120N10S4-05 Power Field-Effect Transistor Infineon Technologies AG IPB120N10S405ATMA1 vs IPP120N10S4-05
PSMN4R8-100BSE Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia IPB120N10S405ATMA1 vs PSMN4R8-100BSE
PSMN4R8-100PSEQ PSMN4R8-100PSE - N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package@en-us TO-220 3-Pin Nexperia IPB120N10S405ATMA1 vs PSMN4R8-100PSEQ

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