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Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2480803RL
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Farnell | MOSFET, P-CH, -40V, -120A, TO-263-3 RoHS: Compliant Min Qty: 10 Lead time: 5 Weeks, 1 Days Container: Reel | 14717 |
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$1.7439 / $2.2276 | Buy Now |
DISTI #
2480803
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Farnell | MOSFET, P-CH, -40V, -120A, TO-263-3 RoHS: Compliant Min Qty: 1 Lead time: 5 Weeks, 1 Days Container: Cut Tape | 14717 |
|
$1.7439 / $2.8386 | Buy Now |
DISTI #
4318972
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Farnell | MOSFET, P-CH, 40V, 120A, TO-263 RoHS: Compliant Min Qty: 1000 Lead time: 5 Weeks, 1 Days Container: Reel | 0 |
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$1.2653 / $1.7057 | Buy Now |
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Rochester Electronics | IPB120P04P - OptiMOS P-Channel 40V Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 775 |
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$1.1900 / $1.4000 | Buy Now |
DISTI #
SP000842284
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EBV Elektronik | Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000842284) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 40V 120A 136W 3.1m10V100A 1.2V340uA 1 Piece P-Channel TO-263-3 MOSFETs ROHS | 7 |
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$3.4072 / $3.7798 | Buy Now |
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Win Source Electronics | MOSFET P-CH 40V 120A TO263-3 / Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | 1344 |
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$3.3391 / $4.3130 | Buy Now |
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IPB120P04P4L03ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPB120P04P4L03ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 78 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB120P04P4L03ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120P04P4L03ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB120P04P4L03ATMA2 | Infineon Technologies AG | $2.7676 | Power Field-Effect Transistor, | IPB120P04P4L03ATMA1 vs IPB120P04P4L03ATMA2 |
IPB120P04P404ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 40V, 0.0035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB120P04P4L03ATMA1 vs IPB120P04P404ATMA1 |