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Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB120P04P4L03ATMA1CT-ND
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DigiKey | MOSFET P-CH 40V 120A D2PAK Min Qty: 1 Lead time: 98 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Limited Supply - Call |
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$1.7475 / $1.9344 | Buy Now |
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Future Electronics | Single P-Channel -40 V 3.1 mOhm 234 nC OptiMOS®-P2 Power-Transistor-PG-TO263-3-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
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$1.7900 / $1.8400 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 930 |
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$3.4552 / $3.6721 | Buy Now |
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New Advantage Corporation | Power Field-Effect Transistor, 120A I(D), 40V,0.0052ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 50 |
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$5.1100 / $5.2900 | Buy Now |
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Win Source Electronics | MOSFET P-CH 40V 120A TO263-3 / Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | 1344 |
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$3.0150 / $4.5220 | Buy Now |
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IPB120P04P4L03ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPB120P04P4L03ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 78 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB120P04P4L03ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120P04P4L03ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB120P04P4L-03 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB120P04P4L03ATMA1 vs IPB120P04P4L-03 |
IPB120P04P4L03ATMA2 | Power Field-Effect Transistor, | Infineon Technologies AG | IPB120P04P4L03ATMA1 vs IPB120P04P4L03ATMA2 |