Datasheets
IPB120P04P4L03ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPB120P04P4L03ATMA2 by Infineon Technologies AG

Overview of IPB120P04P4L03ATMA2 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPB120P04P4L03ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 448-IPB120P04P4L03ATMA2CT-ND
DigiKey MOSFET P-CH 40V 120A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5360
In Stock
  • 1 $3.7400
  • 10 $3.1420
  • 100 $2.5416
  • 500 $2.2592
  • 1,000 $1.9344
  • 2,000 $1.8215
  • 5,000 $1.7475
$1.7475 / $3.7400 Buy Now
DISTI # IPB120P04P4L03ATMA2
Avnet Americas Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120P04P4L03ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.1669
$2.1669 Buy Now
DISTI # 726-IPB120P04P4L03A2
Mouser Electronics MOSFET MOSFET_(20V 40V) RoHS: Compliant 2886
  • 1 $3.7400
  • 10 $3.1400
  • 25 $3.0500
  • 100 $2.5400
  • 250 $2.4700
  • 500 $2.2600
  • 1,000 $1.9300
  • 2,000 $1.8200
$1.8200 / $3.7400 Buy Now
Future Electronics P-Channel 40 V 3.1 mOhm 120 A 136 W SMT Power Transistor - PG-TO-263-3-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.8400
  • 2,000 $1.7900
$1.7900 / $1.8400 Buy Now
Rochester Electronics IPB120P04P - OptiMOS P-Channel 40V Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 2667
  • 1 $2.0400
  • 25 $2.0000
  • 100 $1.9200
  • 500 $1.8300
  • 1,000 $1.7300
$1.7300 / $2.0400 Buy Now
DISTI # IPB120P04P4L03ATMA2
Avnet Americas Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120P04P4L03ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.1669
$2.1669 Buy Now
Ameya Holding Limited   Min Qty: 5 750
  • 5 $4.5894
  • 10 $4.4750
  • 100 $4.3630
  • 250 $4.2536
  • 500 $4.1474
$4.1474 / $4.5894 Buy Now
Ameya Holding Limited   1443
RFQ
DISTI # IPB120P04P4L03ATMA2
Avnet Americas Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120P04P4L03ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.1669
$2.1669 Buy Now
DISTI # SP002325760
EBV Elektronik Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) TO-263 (Alt: SP002325760) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
Win Source Electronics   20130
  • 14 $3.6740
  • 34 $3.0150
  • 52 $2.9210
  • 71 $2.8270
  • 92 $2.7320
  • 123 $2.4500
$2.4500 / $3.6740 Buy Now

Part Details for IPB120P04P4L03ATMA2

IPB120P04P4L03ATMA2 CAD Models

IPB120P04P4L03ATMA2 Part Data Attributes

IPB120P04P4L03ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB120P04P4L03ATMA2 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 78 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 270 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 136 W
Pulsed Drain Current-Max (IDM) 480 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB120P04P4L03ATMA2

This table gives cross-reference parts and alternative options found for IPB120P04P4L03ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120P04P4L03ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB120P04P4L03ATMA1 Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPB120P04P4L03ATMA1
IPB120P04P4L-03 Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPB120P04P4L-03
Part Number Description Manufacturer Compare
IPB120P04P404ATMA1 Power Field-Effect Transistor, 120A I(D), 40V, 0.0035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPB120P04P404ATMA1
IPB120P04P404ATMA2 Power Field-Effect Transistor, Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPB120P04P404ATMA2
IPI120P04P404AKSA1 Power Field-Effect Transistor, 120A I(D), 40V, 0.0038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPI120P04P404AKSA1
IPI120P04P404XK Power Field-Effect Transistor, 120A I(D), 40V, 0.0038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPI120P04P404XK
IPB120P04P4L-03 Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPB120P04P4L-03
FDB9506L-F085 Power MOSFET, P-Channel, Logic Level, Trench, -40 V, -110 A, 3.6 mΩ Power MOSFET, P-Channel, Logic Level, Trench, -40 V, -110 A, 3.6 mΩ, 800-REEL, Automotive Qualified onsemi IPB120P04P4L03ATMA2 vs FDB9506L-F085
IPI120P04P4-04 Power Field-Effect Transistor, 120A I(D), 40V, 0.0038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPI120P04P4-04
IPB120P04P4L03ATMA1 Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB120P04P4L03ATMA2 vs IPB120P04P4L03ATMA1

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