Part Details for IPB123N10N3G by Infineon Technologies AG
Overview of IPB123N10N3G by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPB123N10N3G
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
85X6018
|
Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 85X6018) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 53 Partner Stock |
|
$1.4400 / $2.1100 | Buy Now |
DISTI #
85X6018
|
Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 85X6018) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 53 Partner Stock |
|
$1.4400 / $2.1100 | Buy Now |
DISTI #
85X6018
|
Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 85X6018) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 53 Partner Stock |
|
$1.4400 / $2.1100 | Buy Now |
Part Details for IPB123N10N3G
IPB123N10N3G CAD Models
IPB123N10N3G Part Data Attributes
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IPB123N10N3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB123N10N3G
Infineon Technologies AG
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 58 A | |
Drain-source On Resistance-Max | 0.0123 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 232 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB123N10N3G
This table gives cross-reference parts and alternative options found for IPB123N10N3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB123N10N3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB12CN10NG | Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB123N10N3G vs IPB12CN10NG |