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Part Details for IPB123N10N3GATMA1 by Infineon Technologies AG
Overview of IPB123N10N3GATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB123N10N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB123N10N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 58A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5510 In Stock |
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$0.8520 / $2.0300 | Buy Now |
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DISTI #
IPB123N10N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
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$0.7668 / $0.9372 | Buy Now |
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DISTI #
726-IPB123N10N3GATMA
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Mouser Electronics | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1998 |
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$0.8640 / $1.9500 | Buy Now |
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Future Electronics | IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
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$0.8500 / $0.9150 | Buy Now |
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Future Electronics | IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.8500 / $0.9150 | Buy Now |
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DISTI #
IPB123N10N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
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$0.7668 / $0.9372 | Buy Now |
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DISTI #
IPB123N10N3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 100V, 58A, 94W, PG-TO263-3 Min Qty: 1 | 0 |
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$1.1400 / $1.7200 | RFQ |
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Ameya Holding Limited | IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3 | 1050 |
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RFQ | |
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DISTI #
IPB123N10N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
|
$0.7668 / $0.9372 | Buy Now |
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CHIPMALL.COM LIMITED | Infineon's 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DSon and FOM figure of merit. | 155 |
|
$1.0431 | Buy Now |
Part Details for IPB123N10N3GATMA1
IPB123N10N3GATMA1 CAD Models
IPB123N10N3GATMA1 Part Data Attributes
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IPB123N10N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB123N10N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.0123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 232 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB123N10N3GATMA1
This table gives cross-reference parts and alternative options found for IPB123N10N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB123N10N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB123N10N3GXT | Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB123N10N3GATMA1 vs IPB123N10N3GXT |
| IPD60N10S4-12 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN | Infineon Technologies AG | IPB123N10N3GATMA1 vs IPD60N10S4-12 |