Part Details for IPB123N10N3GXT by Infineon Technologies AG
Overview of IPB123N10N3GXT by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB123N10N3GXT
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB123N10N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
|
$0.7668 / $0.9372 | Buy Now |
DISTI #
IPB123N10N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
|
$0.7668 / $0.9372 | Buy Now |
DISTI #
IPB123N10N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
|
$0.7668 / $0.9372 | Buy Now |
Part Details for IPB123N10N3GXT
IPB123N10N3GXT CAD Models
IPB123N10N3GXT Part Data Attributes
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IPB123N10N3GXT
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB123N10N3GXT
Infineon Technologies AG
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 58 A | |
Drain-source On Resistance-Max | 0.0123 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 232 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB123N10N3GXT
This table gives cross-reference parts and alternative options found for IPB123N10N3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB123N10N3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD60N10S4-12 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN | Infineon Technologies AG | IPB123N10N3GXT vs IPD60N10S4-12 |