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Part Details for IPB156N22NFDATMA1 by Infineon Technologies AG
Overview of IPB156N22NFDATMA1 by Infineon Technologies AG
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPB156N22NFDATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB156N22NFDATMA1CT-ND
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DigiKey | MOSFET N-CH 220V 72A TO263-3 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1047 In Stock |
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$4.0233 / $7.5700 | Buy Now |
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DISTI #
IPB156N22NFDATMA1
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Avnet Americas | OptiMOS FD N-channel Power Transistor 15.6mΩ 300W 220V PG-TO 263-3 T/R - Tape and Reel (Alt: IPB156N22NFDATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$4.2511 / $5.1959 | Buy Now |
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DISTI #
726-IPB156N22NFDATMA
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Mouser Electronics | MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant | 4983 |
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$4.1900 / $7.5600 | Buy Now |
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Future Electronics | 220V 72A 15.6 mOhm N-ch D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 15000Reel |
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$4.1100 | Buy Now |
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Future Electronics | 220V 72A 15.6 mOhm N-ch D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$4.1100 | Buy Now |
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Future Electronics | 220V 72A 15.6 mOhm N-ch D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$4.1100 / $4.9300 | Buy Now |
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DISTI #
IPB156N22NFDATMA1
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Avnet Americas | OptiMOS FD N-channel Power Transistor 15.6mΩ 300W 220V PG-TO 263-3 T/R - Tape and Reel (Alt: IPB156N22NFDATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$4.2511 / $5.1959 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 993 |
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$5.8215 / $9.3019 | Buy Now |
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DISTI #
IPB156N22NFDATMA1
|
Avnet Americas | OptiMOS FD N-channel Power Transistor 15.6mΩ 300W 220V PG-TO 263-3 T/R - Tape and Reel (Alt: IPB156N22NFDATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$4.2511 / $5.1959 | Buy Now |
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DISTI #
SP001624408
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EBV Elektronik | OptiMOS FD N-channel Power Transistor 15.6m? 300W 220V PG-TO 263-3 T/R (Alt: SP001624408) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 5 Days | EBV - 0 |
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Buy Now |
Part Details for IPB156N22NFDATMA1
IPB156N22NFDATMA1 CAD Models
IPB156N22NFDATMA1 Part Data Attributes
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IPB156N22NFDATMA1
Infineon Technologies AG
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Datasheet
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IPB156N22NFDATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 72A I(D), 220V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 220 V | |
| Drain Current-Max (ID) | 72 A | |
| Drain-source On Resistance-Max | 0.0156 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.2 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 288 A | |
| Reference Standard | IEC-61249-2-21; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |