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Part Details for IPB17N25S3100ATMA1 by Infineon Technologies AG
Overview of IPB17N25S3100ATMA1 by Infineon Technologies AG
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Energy and Power Systems
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Price & Stock for IPB17N25S3100ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-IPB17N25S3100ATMA1CT-ND
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DigiKey | MOSFET N-CH 250V 17A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1764 In Stock |
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$0.9490 / $2.2600 | Buy Now |
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DISTI #
IPB17N25S3100ATMA1
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Avnet Americas | Trans MOSFET N-CH 250V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB17N25S3100ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.1768 | Buy Now |
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DISTI #
726-IPB17N25S3100ATM
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Mouser Electronics | MOSFET N-Ch 250V 17A D2PAK-2 RoHS: Compliant | 0 |
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$0.9810 / $2.0000 | Order Now |
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DISTI #
IPB17N25S3100ATMA1
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Avnet Americas | Trans MOSFET N-CH 250V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB17N25S3100ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1768 | Buy Now |
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Ameya Holding Limited | Min Qty: 260 | 900 |
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$2.0412 / $2.1045 | Buy Now |
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DISTI #
IPB17N25S3100ATMA1
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Avnet Americas | Trans MOSFET N-CH 250V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB17N25S3100ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1768 | Buy Now |
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CHIPMALL.COM LIMITED | 406 |
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$1.3007 | Buy Now | |
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DISTI #
SP000876560
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EBV Elektronik | Trans MOSFET N-CH 250V 17A 3-Pin TO-263 T/R (Alt: SP000876560) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days | EBV - 10000 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 250V 17A TO263-3 | 10800 |
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$2.2610 / $3.3920 | Buy Now |
Part Details for IPB17N25S3100ATMA1
IPB17N25S3100ATMA1 CAD Models
IPB17N25S3100ATMA1 Part Data Attributes
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IPB17N25S3100ATMA1
Infineon Technologies AG
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Datasheet
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IPB17N25S3100ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263, 3/2 PIN | |
| Reach Compliance Code | not_compliant | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |