Part Details for IPB180N03S4L01ATMA1 by Infineon Technologies AG
Overview of IPB180N03S4L01ATMA1 by Infineon Technologies AG
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Price & Stock for IPB180N03S4L01ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB180N03S4L01ATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 180A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
860 In Stock |
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$1.6362 / $3.5000 | Buy Now |
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DISTI #
IPB180N03S4L01ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N03S4L01ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.0290 | Buy Now |
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DISTI #
IPB180N03S4L01ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N03S4L01ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.0290 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 30V 180A TO263-7-3 | 1497 |
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RFQ | |
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DISTI #
IPB180N03S4L01ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N03S4L01ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.0290 | Buy Now |
Part Details for IPB180N03S4L01ATMA1
IPB180N03S4L01ATMA1 CAD Models
IPB180N03S4L01ATMA1 Part Data Attributes
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IPB180N03S4L01ATMA1
Infineon Technologies AG
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Datasheet
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IPB180N03S4L01ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-7/6 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 530 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.00105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |