Datasheets
IPB180N04S400ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 40V, 0.00098ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6

Part Details for IPB180N04S400ATMA1 by Infineon Technologies AG

Results Overview of IPB180N04S400ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IPB180N04S400ATMA1 Information

IPB180N04S400ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB180N04S400ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 2480805
Farnell MOSFET, N-CH, 40V, 180A, TO-263-7 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Cut Tape 673
  • 1 $3.5236
  • 10 $2.6054
  • 100 $1.9107
  • 500 $1.6625
  • 1,000 $1.6501
$1.6501 / $3.5236 Buy Now
DISTI # 2480805RL
Farnell MOSFET, N-CH, 40V, 180A, TO-263-7 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel 673
  • 100 $1.9107
  • 500 $1.6625
  • 1,000 $1.6501
$1.6501 / $1.9107 Buy Now
DISTI # IPB180N04S400ATMA1
Avnet Americas Power MOSFET, N Channel, 40 V, 180 A, 0.98 Milliohms, TO-263, 7 Pins, Surface Mount - Tape and Reel (Alt: IPB180N04S400ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.7150
  • 2,000 $1.7017
  • 4,000 $1.6884
  • 6,000 $1.6749
  • 8,000 $1.6616
$1.6616 / $1.7150 Buy Now
Rochester Electronics IPB180N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 4082
  • 1 $1.8600
  • 25 $1.8200
  • 100 $1.7500
  • 500 $1.6700
  • 1,000 $1.5800
$1.5800 / $1.8600 Buy Now
DISTI # SP000646176
EBV Elektronik Power MOSFET N Channel 40 V 180 A 098 Milliohms TO263 7 Pins Surface Mount (Alt: SP000646176) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 180A 300W 0.98m10V100A 1 N-channel TO-263-7-3 MOSFETs ROHS 10
  • 1 $4.0697
  • 10 $3.5618
  • 30 $3.2519
  • 100 $2.9923
$2.9923 / $4.0697 Buy Now

Part Details for IPB180N04S400ATMA1

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IPB180N04S400ATMA1 Part Data Attributes

IPB180N04S400ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB180N04S400ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 40V, 0.00098ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-7/6
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 1250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.00098 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

IPB180N04S400ATMA1 Related Parts

IPB180N04S400ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB180N04S400ATMA1 is -55°C to 175°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.

  • The recommended gate resistor value for IPB180N04S400ATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.

  • Yes, IPB180N04S400ATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.

  • Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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