Part Details for IPB180N04S4H0ATMA1 by Infineon Technologies AG
Overview of IPB180N04S4H0ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB180N04S4H0ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB180N04S4H0ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 180A TO263-7-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1585 In Stock |
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$1.9567 / $4.1900 | Buy Now |
DISTI #
34AC1656
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Avnet Americas | Power MOSFET, N Channel, 40 V, 180 A, 900 µohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 34AC1656) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 0 |
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RFQ | |
DISTI #
IPB180N04S4H0ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N04S4H0ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.4264 | Buy Now |
DISTI #
726-IPB180N04S4H0ATM
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Mouser Electronics | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 RoHS: Compliant | 1000 |
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$2.0300 / $4.1900 | Buy Now |
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Rochester Electronics | IPB180N04 - OptlMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 1559 |
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$1.9400 / $2.2800 | Buy Now |
DISTI #
34AC1656
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Avnet Americas | Power MOSFET, N Channel, 40 V, 180 A, 900 µohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 34AC1656) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 0 |
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RFQ | |
DISTI #
IPB180N04S4H0ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N04S4H0ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.4264 | Buy Now |
DISTI #
IPB180N04S4H0
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TME | Transistor: N-MOSFET, OptiMOS™ T2, unipolar, 40V, 180A, 250W Min Qty: 1 | 0 |
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$1.4500 / $2.0300 | RFQ |
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Ameya Holding Limited | TO263-7/OptiMOS-T2 Power-Transistor | 500 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 1000 | 1460 |
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$2.6826 / $2.8510 | Buy Now |
Part Details for IPB180N04S4H0ATMA1
IPB180N04S4H0ATMA1 CAD Models
IPB180N04S4H0ATMA1 Part Data Attributes
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IPB180N04S4H0ATMA1
Infineon Technologies AG
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Datasheet
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IPB180N04S4H0ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 850 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB180N04S4H0ATMA1
This table gives cross-reference parts and alternative options found for IPB180N04S4H0ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N04S4H0ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB180N04S4-01 | Power Field-Effect Transistor, 180A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB180N04S4H0ATMA1 vs IPB180N04S4-01 |
IPB180N04S4-H0 | Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB180N04S4H0ATMA1 vs IPB180N04S4-H0 |