Part Details for IPB180N06S4H1ATMA2 by Infineon Technologies AG
Overview of IPB180N06S4H1ATMA2 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB180N06S4H1ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB180N06S4H1ATMA2CT-ND
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DigiKey | MOSFET N-CH 60V 180A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6672 In Stock |
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$1.8891 / $4.0400 | Buy Now |
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DISTI #
IPB180N06S4H1ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$2.3425 | Buy Now |
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DISTI #
726-IPB180N06S4H1ATM
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Mouser Electronics | MOSFET N-Ch 60V 180A D2PAK-6 RoHS: Compliant | 5861 |
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$1.9400 / $4.0400 | Buy Now |
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Future Electronics | N-Channel 60 V 1.7 mOhm 270 nC SMT OptiMOS™ Power-Transistor - PG-TO263-7-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
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$1.9600 / $2.0100 | Buy Now |
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Bristol Electronics | 10826 |
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RFQ | ||
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Rochester Electronics | IPB180N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 14 |
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$1.8700 / $2.2000 | Buy Now |
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DISTI #
IPB180N06S4H1ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 1 Days Container: Reel | 6000 |
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$2.1914 / $2.7959 | Buy Now |
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DISTI #
IPB180N06S4H1ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$2.3425 | Buy Now |
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Ameya Holding Limited | TO263-7/OptiMOS-T2 Power-Transistor | 2930 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 1000 | 1000 |
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$2.7545 | Buy Now |
Part Details for IPB180N06S4H1ATMA2
IPB180N06S4H1ATMA2 CAD Models
IPB180N06S4H1ATMA2 Part Data Attributes
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IPB180N06S4H1ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB180N06S4H1ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G6 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB180N06S4H1ATMA2
This table gives cross-reference parts and alternative options found for IPB180N06S4H1ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N06S4H1ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB180N06S4H1ATMA1 | Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB180N06S4H1ATMA2 vs IPB180N06S4H1ATMA1 |
| IPB016N06L3GATMA1 | Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB180N06S4H1ATMA2 vs IPB016N06L3GATMA1 |
| IPB016N06L3GXT | Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB180N06S4H1ATMA2 vs IPB016N06L3GXT |
| IPB180N06S4-H1 | Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7 | Infineon Technologies AG | IPB180N06S4H1ATMA2 vs IPB180N06S4-H1 |
| IPB017N06N3G | Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, D2PAK-7 | Infineon Technologies AG | IPB180N06S4H1ATMA2 vs IPB017N06N3G |