-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
IPB180N10S402ATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 180A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1308 In Stock |
|
$3.2271 / $6.0700 | Buy Now |
DISTI #
IPB180N10S402ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N10S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$3.9150 | Buy Now |
DISTI #
726-IPB180N10S402ATM
|
Mouser Electronics | MOSFET N-Ch 100V 180A D2PAK-6 RoHS: Compliant | 479 |
|
$3.2200 / $6.0700 | Buy Now |
|
Future Electronics | IPB180N10S4 Series 100 V 180 A 2.5 mOhm 300 W 156 nC N-Channel MOSFET - TO-263-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
|
$2.5300 | Buy Now |
|
Rochester Electronics | IPB180N10 - OptlMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 12000 |
|
$3.1300 / $3.6800 | Buy Now |
DISTI #
IPB180N10S402ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N10S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$3.9150 | Buy Now |
|
Ameya Holding Limited | Min Qty: 1000 | 1000 |
|
$4.6009 | Buy Now |
DISTI #
IPB180N10S402ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N10S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$3.9150 | Buy Now |
DISTI #
SP001057184
|
EBV Elektronik | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: SP001057184) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
|
Buy Now | |
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 2000 |
|
$3.3700 / $3.6100 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPB180N10S402ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB180N10S402ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1110 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB180N10S402ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N10S402ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB180N10S4-02 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB180N10S402ATMA1 vs IPB180N10S4-02 |
IPB025N10N3GATMA1 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB180N10S402ATMA1 vs IPB025N10N3GATMA1 |