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Power Field-Effect Transistor, 180A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB180N10S403ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 180A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1155 In Stock |
|
$2.5809 / $5.3000 | Buy Now |
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IPB180N10S403ATMA1
Infineon Technologies AG
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Datasheet
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IPB180N10S403ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 530 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB180N10S403ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N10S403ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB180N10S4-03 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB180N10S403ATMA1 vs IPB180N10S4-03 |