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Part Details for IPB180P04P4L02ATMA1 by Infineon Technologies AG
Overview of IPB180P04P4L02ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPB180P04P4L02ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB180P04P4L02ATMA1CT-ND
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DigiKey | MOSFET P-CH 40V 180A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1000 In Stock |
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$2.3285 / $2.4729 | Buy Now |
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Future Electronics | Single P-Channel 40 V 2.4 mOhm 220 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$2.2900 | Buy Now |
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Rochester Electronics | IPB180P04P - OptiMOS P-Channel 40V Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 19187 |
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$1.8500 / $2.1800 | Buy Now |
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Ameya Holding Limited | Single P-Channel 40 V 2.4 mOhm 220 nC OptiMOS™ Power Mosfet - D2PAK-7 | 64000 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 40V 180A TO263-7 | 56000 |
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$3.5800 / $5.3700 | Buy Now |
Part Details for IPB180P04P4L02ATMA1
IPB180P04P4L02ATMA1 CAD Models
IPB180P04P4L02ATMA1 Part Data Attributes
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IPB180P04P4L02ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB180P04P4L02ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G6 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 84 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0039 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB180P04P4L02ATMA1
This table gives cross-reference parts and alternative options found for IPB180P04P4L02ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180P04P4L02ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB180P04P4L-02 | Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7 | Infineon Technologies AG | IPB180P04P4L02ATMA1 vs IPB180P04P4L-02 |