Part Details for IPB19DP10NMATMA1 by Infineon Technologies AG
Overview of IPB19DP10NMATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IPB19DP10NMATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB19DP10NMATMA1CT-ND
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DigiKey | TRENCH >=100V PG-TO263-3 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1980 In Stock |
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$0.9045 / $2.1600 | Buy Now |
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DISTI #
IPB19DP10NMATMA1
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Avnet Americas | Power MOSFET, P Channel, 100 V, 13.8 A, 0.1486 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB19DP10NMATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.8141 / $0.9950 | Buy Now |
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DISTI #
726-IPB19DP10NMATMA1
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 1000 |
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$0.9350 / $2.1600 | Buy Now |
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Rochester Electronics | IPB19DP10NM - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 | 4000 |
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$0.8970 / $1.0600 | Buy Now |
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DISTI #
IPB19DP10NMATMA1
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Avnet Americas | Power MOSFET, P Channel, 100 V, 13.8 A, 0.1486 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB19DP10NMATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.8141 / $0.9950 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 988 |
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$2.4434 / $2.5977 | Buy Now |
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Ameya Holding Limited | 英飞凌, MOSFET管, PMOS, D2PAK (TO-263)封装 | 500 |
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RFQ | |
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DISTI #
IPB19DP10NMATMA1
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Avnet Americas | Power MOSFET, P Channel, 100 V, 13.8 A, 0.1486 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB19DP10NMATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.8141 / $0.9950 | Buy Now |
Part Details for IPB19DP10NMATMA1
IPB19DP10NMATMA1 CAD Models
IPB19DP10NMATMA1 Part Data Attributes
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IPB19DP10NMATMA1
Infineon Technologies AG
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Datasheet
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IPB19DP10NMATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13.8A I(D), 100V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK, TO-263, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK, TO-263, 3/2 PIN | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 20 Weeks | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13.8 A | |
| Drain-source On Resistance-Max | 0.185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 55 A | |
| Reference Standard | IEC-61249-2-21; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |