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Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79X1433
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Newark | Mosfet, N-Ch, 250V, 64A, To-263- 3, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:64A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9210 |
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$4.4700 / $7.5000 | Buy Now |
DISTI #
86AK5173
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Newark | Mosfet, N-Ch, 250V, 64A, To-263 Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$3.9400 | Buy Now |
DISTI #
IPB200N25N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel | 2000 |
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RFQ | |
DISTI #
79X1433
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Avnet Americas | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 79X1433) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 9210 Partner Stock |
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$4.4200 / $7.5800 | Buy Now |
DISTI #
IPB200N25N3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 250V, 64A, 300W, PG-TO263-3 Min Qty: 1 | 0 |
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$6.6300 / $11.0300 | RFQ |
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Chip 1 Exchange | INSTOCK | 1500 |
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RFQ | |
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Chip-Germany GmbH | RoHS: Not Compliant | 120 |
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RFQ | |
DISTI #
C1S322000194201
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Chip1Stop | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant Container: Cut Tape | 2523 |
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$3.5100 / $5.9400 | Buy Now |
DISTI #
SP000677896
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EBV Elektronik | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | EBV - 118000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 93000 |
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$5.3300 / $5.7600 | Buy Now |
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IPB200N25N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB200N25N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 64 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 256 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB200N25N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB200N25N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB64N25S320ATMA1 | Infineon Technologies AG | $2.6946 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 | IPB200N25N3GATMA1 vs IPB64N25S320ATMA1 |
IPP200N25N3GXKSA1 | Infineon Technologies AG | $4.4926 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPB200N25N3GATMA1 vs IPP200N25N3GXKSA1 |
IPP220N25NFDAKSA1 | Infineon Technologies AG | $3.7471 | Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPB200N25N3GATMA1 vs IPP220N25NFDAKSA1 |