Datasheets
IPB200N25N3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB200N25N3GATMA1 by Infineon Technologies AG

Overview of IPB200N25N3GATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPB200N25N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1433
Newark Mosfet, N-Ch, 250V, 64A, To-263- 3, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:64A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 9210
  • 1 $7.5000
  • 10 $5.3200
  • 25 $4.9000
  • 50 $4.4700
$4.4700 / $7.5000 Buy Now
DISTI # 86AK5173
Newark Mosfet, N-Ch, 250V, 64A, To-263 Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $3.9400
$3.9400 Buy Now
DISTI # IPB200N25N3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 2000
RFQ
DISTI # 79X1433
Avnet Americas Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 79X1433) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 9210 Partner Stock
  • 1 $7.5800
  • 10 $5.9900
  • 25 $5.4700
  • 50 $4.9400
  • 100 $4.4200
$4.4200 / $7.5800 Buy Now
DISTI # IPB200N25N3GATMA1
TME Transistor: N-MOSFET, unipolar, 250V, 64A, 300W, PG-TO263-3 Min Qty: 1 0
  • 1 $11.0300
  • 5 $9.5100
  • 25 $7.6300
  • 100 $6.6300
$6.6300 / $11.0300 RFQ
Chip 1 Exchange INSTOCK 1500
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 120
RFQ
DISTI # C1S322000194201
Chip1Stop Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant Container: Cut Tape 2523
  • 1 $5.9400
  • 10 $4.2100
  • 50 $4.0100
  • 100 $3.8800
  • 200 $3.8600
  • 500 $3.5100
$3.5100 / $5.9400 Buy Now
DISTI # SP000677896
EBV Elektronik Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days EBV - 118000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 93000
  • 1,000 $5.7600
  • 93,000 $5.3300
$5.3300 / $5.7600 Buy Now
Win Source Electronics MOSFET N-CH 250V 64A D2PAK 41300
  • 16 $3.2134
  • 34 $3.0061
  • 52 $2.9025
  • 75 $2.6952
  • 97 $2.5915
  • 121 $2.4878
$2.4878 / $3.2134 Buy Now

Part Details for IPB200N25N3GATMA1

IPB200N25N3GATMA1 CAD Models

IPB200N25N3GATMA1 Part Data Attributes

IPB200N25N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB200N25N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 256 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB200N25N3GATMA1

This table gives cross-reference parts and alternative options found for IPB200N25N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB200N25N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB64N25S320ATMA1 Infineon Technologies AG $2.6946 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 IPB200N25N3GATMA1 vs IPB64N25S320ATMA1
IPP200N25N3GXKSA1 Infineon Technologies AG $4.4926 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB200N25N3GATMA1 vs IPP200N25N3GXKSA1
IPP220N25NFDAKSA1 Infineon Technologies AG $3.7471 Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB200N25N3GATMA1 vs IPP220N25NFDAKSA1

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