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Transistors / Power Field-Effect Transistors / IPB200N25N3GATMA1
Datasheets
IPB200N25N3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB200N25N3GATMA1 by Infineon Technologies AG

Results Overview of IPB200N25N3GATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy

IPB200N25N3GATMA1 Information

IPB200N25N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB200N25N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1433
Newark Mosfet, N-Ch, 250V, 64A, To-263- 3, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:64A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 9210
  • 1 $3.2500
  • 10 $3.2500
  • 25 $3.2500
  • 50 $3.2500
$3.2500 Buy Now
DISTI # 86AK5173
Newark Mosfet, N-Ch, 250V, 64A, To-263 Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $3.9400
$3.9400 Buy Now
DISTI # IPB200N25N3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 3000
  • 1,000 $3.1850
  • 2,000 $3.0173
  • 4,000 $2.9923
  • 6,000 $2.9674
  • 8,000 $2.9422
$2.9422 / $3.1850 Buy Now
DISTI # 79X1433
Avnet Americas Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 79X1433) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 9210 Partner Stock
  • 1 $7.5000
  • 10 $5.3200
  • 25 $4.9000
  • 50 $4.4800
  • 100 $4.4200
$4.4200 / $7.5000 Buy Now
DISTI # IPB200N25N3GATMA1
TME Transistor: N-MOSFET, unipolar, 250V, 64A, 300W, PG-TO263-3 Min Qty: 1 0
  • 1 $10.7000
  • 5 $9.2300
  • 25 $7.4000
  • 100 $6.4300
$6.4300 / $10.7000 RFQ
Chip 1 Exchange INSTOCK 1500
RFQ
DISTI # C1S322000194201
Chip One Stop Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant Container: Cut Tape 2523
  • 1 $4.2500
  • 10 $3.9500
  • 50 $3.8700
  • 200 $3.8600
  • 500 $3.5000
$3.5000 / $4.2500 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 120
RFQ
DISTI # SP000677896
EBV Elektronik Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days EBV - 115000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 92000
  • 1,000 $4.5600
  • 92,000 $4.2200
$4.2200 / $4.5600 Buy Now
Win Source Electronics MOSFET N-CH 250V 64A D2PAK 41300
  • 13 $4.1112
  • 30 $3.3733
  • 46 $3.2679
  • 64 $3.1625
  • 82 $3.0571
  • 110 $2.7408
$2.7408 / $4.1112 Buy Now

Part Details for IPB200N25N3GATMA1

IPB200N25N3GATMA1 CAD Models

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IPB200N25N3GATMA1 Part Data Attributes

Parametric Data
IPB200N25N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB200N25N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 256 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB200N25N3GATMA1

This table gives cross-reference parts and alternative options found for IPB200N25N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB200N25N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB200N25N3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB200N25N3GATMA1 vs IPB200N25N3G
IPB64N25S3-20 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN IPB200N25N3GATMA1 vs IPB64N25S3-20
IXTQ64N25P Littelfuse Inc $5.6701 Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IPB200N25N3GATMA1 vs IXTQ64N25P
IPP220N25NFD Infineon Technologies AG Check for Price Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB200N25N3GATMA1 vs IPP220N25NFD
IPI200N25N3GAKSA1 Infineon Technologies AG $3.0705 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPB200N25N3GATMA1 vs IPI200N25N3GAKSA1
IXTQ64N25P IXYS Corporation Check for Price Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IPB200N25N3GATMA1 vs IXTQ64N25P
FDA59N25 onsemi $2.7402 Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, TO-3P-3L, 450-TUBE IPB200N25N3GATMA1 vs FDA59N25
IXTT64N25P Littelfuse Inc $6.3375 Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IPB200N25N3GATMA1 vs IXTT64N25P
IPB64N25S320ATMA1 Infineon Technologies AG $3.2096 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 IPB200N25N3GATMA1 vs IPB64N25S320ATMA1
IPP220N25NFDAKSA1 Infineon Technologies AG $3.7760 Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB200N25N3GATMA1 vs IPP220N25NFDAKSA1

IPB200N25N3GATMA1 Related Parts

IPB200N25N3GATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB200N25N3GATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.

  • The recommended gate resistor value for IPB200N25N3GATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, IPB200N25N3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.

  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static package.

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