Datasheets
IPB45N06S4L08ATMA3 by: Infineon Technologies AG

Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB45N06S4L08ATMA3 by Infineon Technologies AG

Overview of IPB45N06S4L08ATMA3 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPB45N06S4L08ATMA3

Part # Distributor Description Stock Price Buy
DISTI # 32AK4941
Newark Mosfet, N-Ch, 60V, 45A, To-263 Rohs Compliant: Yes |Infineon IPB45N06S4L08ATMA3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 736
  • 1 $1.6800
  • 10 $1.3900
  • 25 $1.3000
  • 50 $1.2100
  • 100 $1.1100
  • 250 $1.0300
  • 500 $0.9360
  • 1,000 $0.8020
$0.8020 / $1.6800 Buy Now
DISTI # 448-IPB45N06S4L08ATMA3CT-ND
DigiKey MOSFET N-CH 60V 45A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2986
In Stock
  • 1 $1.6300
  • 10 $1.3500
  • 100 $1.0744
  • 500 $0.9091
  • 1,000 $0.7713
  • 2,000 $0.7328
  • 5,000 $0.7052
  • 10,000 $0.6819
$0.6819 / $1.6300 Buy Now
DISTI # IPB45N06S4L08ATMA3
Avnet Americas MOSFET_)40V,60V) - Tape and Reel (Alt: IPB45N06S4L08ATMA3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.8455
$0.8455 Buy Now
DISTI # 726-IPB45N06S4L08AT3
Mouser Electronics MOSFET MOSFET_)40V 60V) RoHS: Compliant 1324
  • 1 $1.6200
  • 10 $1.3400
  • 100 $1.0700
  • 250 $0.9910
  • 500 $0.9000
  • 1,000 $0.7710
  • 2,000 $0.7320
  • 5,000 $0.7050
  • 10,000 $0.6810
$0.6810 / $1.6200 Buy Now
DISTI # 71240569
Verical Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 Min Qty: 26 Package Multiple: 1 Date Code: 2201 Americas - 1000
  • 27 $1.1850
  • 50 $1.1175
  • 100 $0.9700
  • 200 $0.9263
  • 500 $0.9238
  • 1,000 $0.9088
$0.9088 / $1.1850 Buy Now
Rochester Electronics IPB45N06S4L-08 - 60V, N-Ch, Automotive MOSFET, OptiMOS-T2 RoHS: Compliant Status: Active Min Qty: 1 136
  • 1 $0.7955
  • 25 $0.7796
  • 100 $0.7478
  • 500 $0.7159
  • 1,000 $0.6762
$0.6762 / $0.7955 Buy Now
DISTI # IPB45N06S4L08ATMA3
Avnet Americas MOSFET_)40V,60V) - Tape and Reel (Alt: IPB45N06S4L08ATMA3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.8455
$0.8455 Buy Now
Ameya Holding Limited   Min Qty: 250 2980
  • 250 $1.5156
  • 500 $1.4700
$1.4700 / $1.5156 Buy Now
Ameya Holding Limited Infineon MOSFET IPB45N06S4L08ATMA3 662
RFQ
DISTI # IPB45N06S4L08ATMA3
Avnet Americas MOSFET_)40V,60V) - Tape and Reel (Alt: IPB45N06S4L08ATMA3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.8455
$0.8455 Buy Now
DISTI # C1S322000753730
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 1000
  • 1 $1.3300
  • 10 $0.9830
  • 50 $0.9270
  • 100 $0.8050
  • 200 $0.7680
  • 500 $0.7660
  • 1,000 $0.7040
$0.7040 / $1.3300 Buy Now
CHIPMALL.COM LIMITED   200
  • 1 $0.8572
$0.8572 Buy Now
Chips Pulse Industry Limited - MOSFETs ROHS Purchase Online, Ship Immediately 21
  • 30 $2.2086
  • 100 $2.1402
  • 500 $2.0086
  • 1,000 $1.9938
$1.9938 / $2.2086 Buy Now
DISTI # SP001067954
EBV Elektronik MOSFET_)40V,60V) (Alt: SP001067954) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 3958710
element14 Asia-Pacific MOSFET, N-CH, 60V, 45A, TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape 736
  • 1 $1.6990
  • 10 $1.4061
  • 100 $1.0399
  • 500 $0.9447
  • 1,000 $0.8935
  • 5,000 $0.8422
$0.8422 / $1.6990 Buy Now
DISTI # 3958710RL
element14 Asia-Pacific MOSFET, N-CH, 60V, 45A, TO-263 RoHS: Compliant Min Qty: 100 Container: Reel 736
  • 100 $1.0399
  • 500 $0.9447
  • 1,000 $0.8935
  • 5,000 $0.8422
$0.8422 / $1.0399 Buy Now
DISTI # 3958710RL
Farnell MOSFET, N-CH, 60V, 45A, TO-263 RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel 736
  • 100 $0.8777
  • 500 $0.8590
  • 1,000 $0.8403
$0.8403 / $0.8777 Buy Now
DISTI # 3958710
Farnell MOSFET, N-CH, 60V, 45A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 736
  • 1 $1.5606
  • 10 $1.2061
  • 100 $0.8777
  • 500 $0.8590
  • 1,000 $0.8403
$0.8403 / $1.5606 Buy Now
LCSC 60V 45A 7.9m45A10V 71W 2.2V35uA 1PCSNChannel TO-263-3 MOSFETs ROHS 18
  • 1 $0.8758
  • 10 $0.8345
  • 30 $0.8099
  • 100 $0.7848
  • 500 $0.7365
  • 1,000 $0.7311
$0.7311 / $0.8758 Buy Now

Part Details for IPB45N06S4L08ATMA3

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IPB45N06S4L08ATMA3 Part Data Attributes

IPB45N06S4L08ATMA3 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB45N06S4L08ATMA3 Infineon Technologies AG Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.0079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB45N06S4L08ATMA3

This table gives cross-reference parts and alternative options found for IPB45N06S4L08ATMA3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB45N06S4L08ATMA3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB45N06S4L08ATMA2 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB45N06S4L08ATMA3 vs IPB45N06S4L08ATMA2
IPB45N06S4L08ATMA1 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB45N06S4L08ATMA3 vs IPB45N06S4L08ATMA1
Part Number Description Manufacturer Compare
PHD83N03LT 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 NXP Semiconductors IPB45N06S4L08ATMA3 vs PHD83N03LT
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IPB45N06S4L08ATMA3 vs IXFH12N100F
SSS7N60B Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation IPB45N06S4L08ATMA3 vs SSS7N60B
BUK465-60A 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors IPB45N06S4L08ATMA3 vs BUK465-60A
FDP6035L Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IPB45N06S4L08ATMA3 vs FDP6035L
FQA17N40 Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN Fairchild Semiconductor Corporation IPB45N06S4L08ATMA3 vs FQA17N40
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB45N06S4L08ATMA3 vs SPB80N06S2-07
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc IPB45N06S4L08ATMA3 vs IXFH30N40Q
STW80N06-10 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics IPB45N06S4L08ATMA3 vs STW80N06-10
IXFK35N50 Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN IXYS Corporation IPB45N06S4L08ATMA3 vs IXFK35N50

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