Part Details for IPB50CN10NGATMA1 by Infineon Technologies AG
Overview of IPB50CN10NGATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB50CN10NGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPB50CN10 - OptlMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3000 |
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$0.4835 / $0.5688 | Buy Now |
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Chip1Cloud | MOSFET N-CH 100V 20A TO263-3 | 2000 |
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RFQ |
Part Details for IPB50CN10NGATMA1
IPB50CN10NGATMA1 CAD Models
IPB50CN10NGATMA1 Part Data Attributes:
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IPB50CN10NGATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB50CN10NGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB50CN10NGATMA1
This table gives cross-reference parts and alternative options found for IPB50CN10NGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB50CN10NGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD49CN10NG | Power Field-Effect Transistor, 20A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB50CN10NGATMA1 vs IPD49CN10NG |
IRFNJ540-JQR-B | 22A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IPB50CN10NGATMA1 vs IRFNJ540-JQR-B |
STL8N10LF3 | Automotive-grade N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 package | STMicroelectronics | IPB50CN10NGATMA1 vs STL8N10LF3 |
IPD49CN10NGTR | Power Field-Effect Transistor, 20A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB50CN10NGATMA1 vs IPD49CN10NGTR |