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Transistors / Power Field-Effect Transistors / IPB60R040C7ATMA1
Datasheets
IPB60R040C7ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Part Details for IPB60R040C7ATMA1 by Infineon Technologies AG

Results Overview of IPB60R040C7ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IPB60R040C7ATMA1 Information

IPB60R040C7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB60R040C7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7103
Newark Mosfet, N-Ch, 600V, 50A, 150Deg C, 227W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPB60R040C7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 16
  • 1 $11.2100
  • 10 $8.7900
  • 25 $8.0000
$8.0000 / $11.2100 Buy Now
DISTI # 86AK5175
Newark Mosfet, N-Ch, 600V, 50A, To-263 Rohs Compliant: Yes |Infineon IPB60R040C7ATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $6.6200
$6.6200 Buy Now
DISTI # 93AC7103
Avnet Americas Trans MOSFET N 650V 50A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 93AC7103) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack 16 Partner Stock
  • 1 $10.9300
  • 10 $8.1600
  • 25 $8.3200
  • 50 $10.6200
  • 100 $10.1700
$8.1600 / $10.9300 Buy Now
DISTI # IPB60R040C7ATMA1
Avnet Americas Trans MOSFET N 650V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R040C7ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 1,000 $5.2720
  • 2,000 $5.2288
  • 4,000 $5.1856
  • 6,000 $5.1424
  • 8,000 $5.0991
$5.0991 / $5.2720 Buy Now
Rochester Electronics IPB60R040 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 4
  • 1 $6.0000
  • 25 $5.8800
  • 100 $5.6400
  • 500 $5.4000
  • 1,000 $5.1000
$5.1000 / $6.0000 Buy Now
DISTI # C1S322000720404
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 1000
  • 1 $6.3000
  • 10 $6.2700
  • 50 $6.1500
  • 100 $6.1300
  • 200 $6.1200
  • 500 $5.6500
$5.6500 / $6.3000 Buy Now
DISTI # SP001277610
EBV Elektronik Trans MOSFET N 650V 50A 3-Pin TO-263 T/R (Alt: SP001277610) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 650V 50A TO263-3 / N-Channel 650 V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3 4550
  • 5 $10.8098
  • 12 $8.8696
  • 18 $8.5925
  • 25 $8.3153
  • 32 $8.0381
  • 42 $7.2066
$7.2066 / $10.8098 Buy Now

Part Details for IPB60R040C7ATMA1

IPB60R040C7ATMA1 CAD Models

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IPB60R040C7ATMA1 Part Data Attributes

Parametric Data
IPB60R040C7ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB60R040C7ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 249 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 211 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IPB60R040C7ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB60R040C7ATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.

  • The recommended gate resistor value for IPB60R040C7ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, IPB60R040C7ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuits are properly synchronized.

  • The maximum allowable voltage transient for IPB60R040C7ATMA1 is ±10% of the maximum rated voltage (600V).

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