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Part Details for IPB60R055CFD7ATMA1 by Infineon Technologies AG
Overview of IPB60R055CFD7ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB60R055CFD7ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42AH1822
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Newark | Mosfet, N-Ch, 600V, 38A, 150Deg C, 178W Rohs Compliant: Yes |Infineon IPB60R055CFD7ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 55 |
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$4.5900 / $7.2700 | Buy Now |
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DISTI #
448-IPB60R055CFD7ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 38A TO263-3 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1048 In Stock |
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$3.7162 / $6.9900 | Buy Now |
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DISTI #
IPB60R055CFD7ATMA1
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Avnet Americas | Power Transistor MOSFET N-Channel Enhancement 600V 38A 3-Pin D2PAK T/R - Tape and Reel (Alt: IPB60R055CFD7ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$4.5083 | Buy Now |
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DISTI #
726-IPB60R055CFD7ATM
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Mouser Electronics | MOSFET HIGH POWER_NEW RoHS: Compliant | 7 |
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$3.7100 / $6.9900 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$3.8900 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$3.8900 | Buy Now |
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DISTI #
IPB60R055CFD7ATMA1
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Avnet Americas | Power Transistor MOSFET N-Channel Enhancement 600V 38A 3-Pin D2PAK T/R - Tape and Reel (Alt: IPB60R055CFD7ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$4.5083 | Buy Now |
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Ameya Holding Limited | Min Qty: 2 | 2004 |
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$8.5183 / $9.0572 | Buy Now |
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Ameya Holding Limited | 英飞凌, IPA60R系列, 场效应管Mosfet, NMOS, D2PAK (TO-263)封装 | 3 |
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RFQ | |
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DISTI #
SP002621130
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EBV Elektronik | Power Transistor MOSFET N-Channel Enhancement 600V 38A 3-Pin D2PAK T/R (Alt: SP002621130) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB60R055CFD7ATMA1
IPB60R055CFD7ATMA1 CAD Models
IPB60R055CFD7ATMA1 Part Data Attributes:
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IPB60R055CFD7ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB60R055CFD7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 153 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |