Datasheets
IPB60R250CP by: Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB60R250CP by Infineon Technologies AG

Overview of IPB60R250CP by Infineon Technologies AG

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Applications Industrial Automation

Price & Stock for IPB60R250CP

Part # Distributor Description Stock Price Buy
DISTI # SMC-IPB60R250CP
Sensible Micro Corporation Trans Mosfet N-Ch 600V 12A 3-Pin To-263 T/R - Tape And Reel Ipb60R250Cp) RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days 215
  • 100 $1.2363
  • 500 $1.1787
  • 1,000 $1.1488
$1.1488 / $1.2363 RFQ

Part Details for IPB60R250CP

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IPB60R250CP Part Data Attributes

IPB60R250CP Infineon Technologies AG
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IPB60R250CP Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 345 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB60R250CP

This table gives cross-reference parts and alternative options found for IPB60R250CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R250CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB60R250CPATMA1 Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB60R250CP vs IPB60R250CPATMA1
Part Number Description Manufacturer Compare
IPB60R250CPATMA1 Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB60R250CP vs IPB60R250CPATMA1
PB1-A28A1AA0P Potentiometer, Esterline Technologies Corporation IPB60R250CP vs PB1-A28A1AA0P

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