Part Details for IPB65R280E6ATMA1 by Infineon Technologies AG
Overview of IPB65R280E6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPB65R280E6ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB65R280E6ATMA1-ND
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DigiKey | MOSFET N-CH 650V 13.8A D2PAK Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
DISTI #
IPB65R280E6ATMA1
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Avnet Americas | Trans MOSFET N-CH 650(Min)V 13.8A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R280E6ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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RFQ | |
DISTI #
IPB65R280E6ATMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 13.8A, 104W, PG-TO263-3 Min Qty: 1 | 0 |
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$1.6300 / $2.7200 | RFQ |
Part Details for IPB65R280E6ATMA1
IPB65R280E6ATMA1 CAD Models
IPB65R280E6ATMA1 Part Data Attributes
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IPB65R280E6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB65R280E6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 39 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |