Part Details for IPB70P04P409ATMA1 by Infineon Technologies AG
Overview of IPB70P04P409ATMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB70P04P409ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPB70P04P - OptiMOS P-Channel 40V Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 9760 |
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$0.9956 / $1.1700 | Buy Now |
Part Details for IPB70P04P409ATMA1
IPB70P04P409ATMA1 CAD Models
IPB70P04P409ATMA1 Part Data Attributes:
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IPB70P04P409ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB70P04P409ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 72A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 72 A | |
Drain-source On Resistance-Max | 0.0094 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 288 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB70P04P409ATMA1
This table gives cross-reference parts and alternative options found for IPB70P04P409ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB70P04P409ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB70P04P409XT | Power Field-Effect Transistor, 72A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70P04P409ATMA1 vs IPB70P04P409XT |
IPB70P04P4-09 | Power Field-Effect Transistor, 72A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70P04P409ATMA1 vs IPB70P04P4-09 |