Part Details for IPB80P04P4L-08 by Infineon Technologies AG
Results Overview of IPB80P04P4L-08 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPB80P04P4L-08 Information
IPB80P04P4L-08 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IPB80P04P4L-08
IPB80P04P4L-08 CAD Models
IPB80P04P4L-08 Part Data Attributes
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IPB80P04P4L-08
Infineon Technologies AG
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Datasheet
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IPB80P04P4L-08
Infineon Technologies AG
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0079 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB80P04P4L-08
This table gives cross-reference parts and alternative options found for IPB80P04P4L-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80P04P4L-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPP70P04P4L-08 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPB80P04P4L-08 vs IPP70P04P4L-08 |
IPI80P04P407AKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPB80P04P4L-08 vs IPI80P04P407AKSA1 |
IPI70P04P409XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 72A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPB80P04P4L-08 vs IPI70P04P409XK |
IPI80P04P4L-04 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPB80P04P4L-08 vs IPI80P04P4L-04 |
IPB80P04P407ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80P04P4L-08 vs IPB80P04P407ATMA1 |
IPB80P04P4L-04 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80P04P4L-08 vs IPB80P04P4L-04 |
FDD9509L-F085 | onsemi | Check for Price | P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ P-Channel PowerTrench MOSFET, DPAK-3 / TO-252-3, 2500-REEL, Automotive Qualified | IPB80P04P4L-08 vs FDD9509L-F085 |
IPB80P04P407XT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80P04P4L-08 vs IPB80P04P407XT |
FDB9509L-F085 | onsemi | Check for Price | PowerTrench® MOSFET, P-Channel, -40 V, -83 A, 8.0 mΩ, D2PAK-3 / TO-263-2, 800-REEL, Automotive Qualified | IPB80P04P4L-08 vs FDB9509L-F085 |
IPB80P04P4L04ATMA1 | Infineon Technologies AG | $1.7132 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80P04P4L-08 vs IPB80P04P4L04ATMA1 |