Datasheets
IPB80P04P4L-08 by:

Power Field-Effect Transistor,

Part Details for IPB80P04P4L-08 by Infineon Technologies AG

Results Overview of IPB80P04P4L-08 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IPB80P04P4L-08 Information

IPB80P04P4L-08 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPB80P04P4L-08

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IPB80P04P4L-08 Part Data Attributes

IPB80P04P4L-08 Infineon Technologies AG
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IPB80P04P4L-08 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 24 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 90 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 320 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB80P04P4L-08

This table gives cross-reference parts and alternative options found for IPB80P04P4L-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80P04P4L-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP70P04P4L-08 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB80P04P4L-08 vs IPP70P04P4L-08
IPI80P04P407AKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPB80P04P4L-08 vs IPI80P04P407AKSA1
IPI70P04P409XK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 72A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPB80P04P4L-08 vs IPI70P04P409XK
IPI80P04P4L-04 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPB80P04P4L-08 vs IPI80P04P4L-04
IPB80P04P407ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80P04P4L-08 vs IPB80P04P407ATMA1
IPB80P04P4L-04 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80P04P4L-08 vs IPB80P04P4L-04
FDD9509L-F085 onsemi Check for Price P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ P-Channel PowerTrench MOSFET, DPAK-3 / TO-252-3, 2500-REEL, Automotive Qualified IPB80P04P4L-08 vs FDD9509L-F085
IPB80P04P407XT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80P04P4L-08 vs IPB80P04P407XT
FDB9509L-F085 onsemi Check for Price PowerTrench® MOSFET, P-Channel, -40 V, -83 A, 8.0 mΩ, D2PAK-3 / TO-263-2, 800-REEL, Automotive Qualified IPB80P04P4L-08 vs FDB9509L-F085
IPB80P04P4L04ATMA1 Infineon Technologies AG $1.7132 Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80P04P4L-08 vs IPB80P04P4L04ATMA1

IPB80P04P4L-08 Related Parts

IPB80P04P4L-08 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IPB80P04P04L-08 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces, to keep the junction temperature within the specified range.

  • The recommended PCB layout and thermal design for the IPB80P04P4L-08 involves using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal interface, and ensuring good thermal conductivity between the device and the heat sink.

  • To handle power dissipation and thermal management, it's crucial to calculate the device's power dissipation, select an appropriate heat sink, and implement a thermal interface material with a low thermal resistance.

  • The IPB80P04P4L-08 has built-in ESD protection, but it's still essential to follow proper handling and assembly procedures to prevent ESD damage. Additionally, latch-up prevention measures, such as using a latch-up immune design and following proper layout guidelines, are recommended.

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