Datasheets
IPC100N04S5-1R9 by:

Power Field-Effect Transistor

Part Details for IPC100N04S5-1R9 by Infineon Technologies AG

Results Overview of IPC100N04S5-1R9 by Infineon Technologies AG

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IPC100N04S5-1R9 Information

IPC100N04S5-1R9 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPC100N04S5-1R9

Part # Distributor Description Stock Price Buy
DISTI # IPC100N04S51R9
TME Transistor: N-MOSFET, unipolar, 40V, 100A, 100W, PG-TDSON-8 Min Qty: 1 0
  • 1 $0.7590
  • 5 $0.6770
  • 25 $0.5950
  • 100 $0.5440
$0.5440 / $0.7590 RFQ
Chip 1 Exchange INSTOCK 110000
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 10000
RFQ
LCSC 40V 1.6m10V50A 100W 1 N-channel TDSON-8(5.2x5.5) MOSFETs ROHS 20
  • 1 $0.5938
  • 10 $0.5785
  • 30 $0.5693
  • 100 $0.5602
$0.5602 / $0.5938 Buy Now

Part Details for IPC100N04S5-1R9

IPC100N04S5-1R9 CAD Models

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IPC100N04S5-1R9 Part Data Attributes

IPC100N04S5-1R9 Infineon Technologies AG
Buy Now Datasheet
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IPC100N04S5-1R9 Infineon Technologies AG Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8-34, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 400 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

IPC100N04S5-1R9 Related Parts

IPC100N04S5-1R9 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the IPC100N04S5-1R9 is 175°C, as specified in the datasheet.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • For optimal performance, use a PCB layout that minimizes parasitic inductance and resistance. Keep the drain and source pins as close as possible, and use a solid ground plane to reduce electromagnetic interference (EMI).

  • Yes, the IPC100N04S5-1R9 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is capable of providing a fast rise and fall time to minimize switching losses.

  • Use a suitable overvoltage protection (OVP) circuit, such as a zener diode or a transient voltage suppressor (TVS), to protect the MOSFET from voltage spikes. Additionally, implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC.

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