Part Details for IPC100N04S5-1R9 by Infineon Technologies AG
Results Overview of IPC100N04S5-1R9 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPC100N04S5-1R9 Information
IPC100N04S5-1R9 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPC100N04S5-1R9
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPC100N04S51R9
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TME | Transistor: N-MOSFET, unipolar, 40V, 100A, 100W, PG-TDSON-8 Min Qty: 1 | 0 |
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$0.5440 / $0.7590 | RFQ |
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Chip 1 Exchange | INSTOCK | 110000 |
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RFQ | |
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Chip-Germany GmbH | RoHS: Not Compliant | 10000 |
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RFQ | |
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LCSC | 40V 1.6m10V50A 100W 1 N-channel TDSON-8(5.2x5.5) MOSFETs ROHS | 20 |
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$0.5602 / $0.5938 | Buy Now |
Part Details for IPC100N04S5-1R9
IPC100N04S5-1R9 CAD Models
IPC100N04S5-1R9 Part Data Attributes
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IPC100N04S5-1R9
Infineon Technologies AG
Buy Now
Datasheet
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IPC100N04S5-1R9
Infineon Technologies AG
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8-34, 8 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |