Datasheets
IPC90N04S5L-3R3 by:

Power Field-Effect Transistor,

Part Details for IPC90N04S5L-3R3 by Infineon Technologies AG

Overview of IPC90N04S5L-3R3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPC90N04S5L-3R3

Part # Distributor Description Stock Price Buy
DISTI # IPC90N04S5L3R3
TME Transistor: N-MOSFET, unipolar, 40V, 90A, 62W, PG-TDSON-8 Min Qty: 1 0
  • 1 $0.8700
  • 5 $0.8000
  • 25 $0.7100
  • 100 $0.6400
$0.6400 / $0.8700 RFQ

Part Details for IPC90N04S5L-3R3

IPC90N04S5L-3R3 CAD Models

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IPC90N04S5L-3R3 Part Data Attributes

IPC90N04S5L-3R3 Infineon Technologies AG
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IPC90N04S5L-3R3 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 38 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 62 W
Pulsed Drain Current-Max (IDM) 360 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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