Datasheets
IPC90N04S5L3R3ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN

Part Details for IPC90N04S5L3R3ATMA1 by Infineon Technologies AG

Overview of IPC90N04S5L3R3ATMA1 by Infineon Technologies AG

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Price & Stock for IPC90N04S5L3R3ATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPC90N04S5L3R3ATMA1CT-ND
DigiKey MOSFET N-CH 40V 90A 8TDSON-34 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8078
In Stock
  • 1 $1.1800
  • 10 $0.9660
  • 100 $0.7510
  • 500 $0.6366
  • 1,000 $0.5186
  • 2,000 $0.4882
  • 5,000 $0.4649
  • 10,000 $0.4435
$0.4435 / $1.1800 Buy Now
DISTI # IPC90N04S5L3R3ATMA1
Avnet Americas Transistor MOSFET N-CH 40V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: IPC90N04S5L3R3ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 5,000 $0.6551
  • 10,000 $0.6197
  • 20,000 $0.5843
  • 30,000 $0.5489
  • 40,000 $0.5134
$0.5134 / $0.6551 Buy Now
DISTI # 726-IPC90N04S5L3R3AT
Mouser Electronics MOSFET MOSFET_(20V,40V) RoHS: Compliant 14455
  • 1 $1.1700
  • 10 $0.8810
  • 100 $0.7360
  • 500 $0.6360
  • 1,000 $0.4890
  • 2,500 $0.4880
  • 5,000 $0.4420
$0.4420 / $1.1700 Buy Now
Future Electronics 40Volt, 90Amp, 3.3mohm, 30QgnC, QFN 5X6, OptiMOS™ 5 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 5000
Reel
  • 5,000 $0.4600
$0.4600 Buy Now
Rochester Electronics IPC90N04S - Optimos Power-Transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 2104
  • 1 $0.5164
  • 25 $0.5061
  • 100 $0.4854
  • 500 $0.4648
  • 1,000 $0.4389
$0.4389 / $0.5164 Buy Now
DISTI # IPC90N04S5L3R3ATMA1
Avnet Americas Transistor MOSFET N-CH 40V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: IPC90N04S5L3R3ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 5,000 $0.6551
  • 10,000 $0.6197
  • 20,000 $0.5843
  • 30,000 $0.5489
  • 40,000 $0.5134
$0.5134 / $0.6551 Buy Now
Ameya Holding Limited   Min Qty: 1260 19920
  • 1,260 $1.1731
  • 2,500 $1.1378
$1.1378 / $1.1731 Buy Now
DISTI # IPC90N04S5L3R3ATMA1
Avnet Americas Transistor MOSFET N-CH 40V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: IPC90N04S5L3R3ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 5,000 $0.6551
  • 10,000 $0.6197
  • 20,000 $0.5843
  • 30,000 $0.5489
  • 40,000 $0.5134
$0.5134 / $0.6551 Buy Now
DISTI # SP001418122
EBV Elektronik Transistor MOSFET N-CH 40V 90A 8-Pin TDSON T/R (Alt: SP001418122) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 2 Weeks, 5 Days EBV - 0
Buy Now

Part Details for IPC90N04S5L3R3ATMA1

IPC90N04S5L3R3ATMA1 CAD Models

IPC90N04S5L3R3ATMA1 Part Data Attributes

IPC90N04S5L3R3ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPC90N04S5L3R3ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 360 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPC90N04S5L3R3ATMA1

This table gives cross-reference parts and alternative options found for IPC90N04S5L3R3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPC90N04S5L3R3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD90N04S3-H4 Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPC90N04S5L3R3ATMA1 vs IPD90N04S3-H4
TK100S04N1L Nch 30V<VDSS≤60V Toshiba America Electronic Components IPC90N04S5L3R3ATMA1 vs TK100S04N1L
IPD90N04S404ATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPC90N04S5L3R3ATMA1 vs IPD90N04S404ATMA1

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