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Power Field-Effect Transistor, 90A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
60R2684
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Newark | Mosfet, N Channel, 30V, 90A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon IPD031N03LGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2548 |
|
$0.6350 / $0.9570 | Buy Now |
DISTI #
IPD031N03LGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 90A TO252-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
4264 In Stock |
|
$0.5536 / $0.9200 | Buy Now |
DISTI #
IPD031N03LGATMA1
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Avnet Americas | Power MOSFET, N Channel, 30 V, 90 A, 0.0026 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD031N03LGATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.4972 / $0.6077 | Buy Now |
DISTI #
IPD031N03LGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD031N03LGATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.4972 / $0.6077 | Buy Now |
DISTI #
726-IPD031N03LGATMA1
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Mouser Electronics | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 RoHS: Compliant | 2715 |
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$0.5390 / $0.8700 | Buy Now |
DISTI #
V36:1790_06384300
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Arrow Electronics | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Date Code: 2223 | Americas - 20000 |
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$0.3827 / $0.3901 | Buy Now |
DISTI #
V72:2272_06384300
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Arrow Electronics | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2223 Container: Cut Strips | Americas - 2198 |
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$0.4724 / $0.4970 | Buy Now |
|
Future Electronics | IPD031N03LG Series 30 V 90 A 3.1 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.5350 / $0.5750 | Buy Now |
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Future Electronics | IPD031N03LG Series 30 V 90 A 3.1 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.5350 / $0.5600 | Buy Now |
DISTI #
68371257
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Verical | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2221 | Americas - 95000 |
|
$0.5929 | Buy Now |
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IPD031N03LGATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD031N03LGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |